Datasheets
EDS1232CABB-10-E by:

Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90

Part Details for EDS1232CABB-10-E by Elpida Memory Inc

Overview of EDS1232CABB-10-E by Elpida Memory Inc

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Part Details for EDS1232CABB-10-E

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EDS1232CABB-10-E Part Data Attributes:

EDS1232CABB-10-E Elpida Memory Inc
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EDS1232CABB-10-E Elpida Memory Inc Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ELPIDA MEMORY INC
Part Package Code BGA
Package Description TFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e1
Length 13 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.07 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.25 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for EDS1232CABB-10-E

This table gives cross-reference parts and alternative options found for EDS1232CABB-10-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDS1232CABB-10-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
EDS1232CABB-1A-E Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc EDS1232CABB-10-E vs EDS1232CABB-1A-E
EDS1232CABB-1AL-E Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc EDS1232CABB-10-E vs EDS1232CABB-1AL-E
EDS1232CASE-1AL-E Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 Elpida Memory Inc EDS1232CABB-10-E vs EDS1232CASE-1AL-E
Part Number Description Manufacturer Compare
K4M56323LE-EC1H0 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor EDS1232CABB-10-E vs K4M56323LE-EC1H0
K4S283233E-FN1L0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor EDS1232CABB-10-E vs K4S283233E-FN1L0
EDS2732CABJ-1A-E Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Elpida Memory Inc EDS1232CABB-10-E vs EDS2732CABJ-1A-E
MT46H8M32LFB5-5IT:H DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Micron Technology Inc EDS1232CABB-10-E vs MT46H8M32LFB5-5IT:H
K4M28323LH-HG750 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor EDS1232CABB-10-E vs K4M28323LH-HG750
K4S28323LE-FS1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor EDS1232CABB-10-E vs K4S28323LE-FS1H0
HY5W2A2LF-P Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc EDS1232CABB-10-E vs HY5W2A2LF-P
K4M563233G-FN750 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor EDS1232CABB-10-E vs K4M563233G-FN750
K4M56323LE-EE800 Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 Samsung Semiconductor EDS1232CABB-10-E vs K4M56323LE-EE800
IS42S32800B-7BLI Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, BGA-90 Integrated Silicon Solution Inc EDS1232CABB-10-E vs IS42S32800B-7BLI

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