Datasheets
EDS1216AABH-75-E by: Elpida Memory Inc

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, ROHS COMPLIANT, FBGA-54

Part Details for EDS1216AABH-75-E by Elpida Memory Inc

Overview of EDS1216AABH-75-E by Elpida Memory Inc

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Part Details for EDS1216AABH-75-E

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EDS1216AABH-75-E Part Data Attributes:

EDS1216AABH-75-E Elpida Memory Inc
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EDS1216AABH-75-E Elpida Memory Inc Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, ROHS COMPLIANT, FBGA-54
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ELPIDA MEMORY INC
Part Package Code BGA
Package Description TFBGA, BGA54,9X9,32
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code S-PBGA-B54
JESD-609 Code e1
Length 8 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA54,9X9,32
Package Shape SQUARE
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.22 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for EDS1216AABH-75-E

This table gives cross-reference parts and alternative options found for EDS1216AABH-75-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDS1216AABH-75-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V54C3128164VBK7IPC Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, GREEN, MO-210, FBGA-54 ProMOS Technologies Inc EDS1216AABH-75-E vs V54C3128164VBK7IPC
MT48LC8M16A2F4-7EAT:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54 Micron Technology Inc EDS1216AABH-75-E vs MT48LC8M16A2F4-7EAT:G
IS42SM16800E-75EBLI Synchronous DRAM, 8MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 Integrated Silicon Solution Inc EDS1216AABH-75-E vs IS42SM16800E-75EBLI
MT48LC8M16A2B4-75LAT:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 Micron Technology Inc EDS1216AABH-75-E vs MT48LC8M16A2B4-75LAT:G
V54C3128164VCUK7H Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, GREEN, MO-207, FBGA-54 ProMOS Technologies Inc EDS1216AABH-75-E vs V54C3128164VCUK7H
V54C3128164VBC6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, MO-210, FBGA-54 ProMOS Technologies Inc EDS1216AABH-75-E vs V54C3128164VBC6I
MT48LC8M16A2F4-7ELAT:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54 Micron Technology Inc EDS1216AABH-75-E vs MT48LC8M16A2F4-7ELAT:G
V54C3128164VCUK6E Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, GREEN, MO-207, FBGA-54 ProMOS Technologies Inc EDS1216AABH-75-E vs V54C3128164VCUK6E
V54C3128164VBK7I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, GREEN, MO-210, FBGA-54 ProMOS Technologies Inc EDS1216AABH-75-E vs V54C3128164VBK7I
IS42SM16800E-7BL Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 Integrated Silicon Solution Inc EDS1216AABH-75-E vs IS42SM16800E-7BL
Part Number Description Manufacturer Compare
IS42VM16800G-6BLI Synchronous DRAM, 8MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54 Integrated Silicon Solution Inc EDS1216AABH-75-E vs IS42VM16800G-6BLI
HY5V26EFP-7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc EDS1216AABH-75-E vs HY5V26EFP-7
V54C3128164VCUK6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, GREEN, MO-207, FBGA-54 ProMOS Technologies Inc EDS1216AABH-75-E vs V54C3128164VCUK6I
MT48LC8M16A2B4-75AT:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54 Micron Technology Inc EDS1216AABH-75-E vs MT48LC8M16A2B4-75AT:G
V54C3128164VBC7I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, MO-210, FBGA-54 ProMOS Technologies Inc EDS1216AABH-75-E vs V54C3128164VBC7I
IS42SM16800H-75BI Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, TFBGA-54 Integrated Silicon Solution Inc EDS1216AABH-75-E vs IS42SM16800H-75BI
HY5V26EF-7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc EDS1216AABH-75-E vs HY5V26EF-7
V54C3128164VCK7E Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, GREEN, PLASTIC, FBGA-54 ProMOS Technologies Inc EDS1216AABH-75-E vs V54C3128164VCK7E
HY5V26EF-7I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc EDS1216AABH-75-E vs HY5V26EF-7I
HY5V26FFP-7I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc EDS1216AABH-75-E vs HY5V26FFP-7I

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