Part Details for EDE2516ABSE-GE-E by Elpida Memory Inc
Overview of EDE2516ABSE-GE-E by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Part Details for EDE2516ABSE-GE-E
EDE2516ABSE-GE-E CAD Models
EDE2516ABSE-GE-E Part Data Attributes
|
|
EDE2516ABSE-GE-E
Elpida Memory Inc
Buy Now
Datasheet
|
Compare Parts:
EDE2516ABSE-GE-E
Elpida Memory Inc
DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA84,9X15,32 | |
| Pin Count | 84 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| JESD-609 Code | e1 | |
| Length | 13 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.12 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.006 A | |
| Supply Current-Max | 0.225 mA | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.75 V | |
| Supply Voltage-Nom (Vsup) | 1.85 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 11 mm |
Alternate Parts for EDE2516ABSE-GE-E
This table gives cross-reference parts and alternative options found for EDE2516ABSE-GE-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDE2516ABSE-GE-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V59C1256164QAF25A | 16MX16 DDR DRAM, 0.4ns, PBGA84, ROHS COMPLIANT, MO-207, FBGA-84 | ProMOS Technologies Inc | EDE2516ABSE-GE-E vs V59C1256164QAF25A |
| V59C1256164QAF25 | 16MX16 DDR DRAM, 0.4ns, PBGA84, ROHS COMPLIANT, MO-207, FBGA-84 | ProMOS Technologies Inc | EDE2516ABSE-GE-E vs V59C1256164QAF25 |