Part Details for EDD1232AAFA-6B-E by Elpida Memory Inc
Overview of EDD1232AAFA-6B-E by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for EDD1232AAFA-6B-E
EDD1232AAFA-6B-E CAD Models
EDD1232AAFA-6B-E Part Data Attributes
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EDD1232AAFA-6B-E
Elpida Memory Inc
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Datasheet
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EDD1232AAFA-6B-E
Elpida Memory Inc
DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, ROHS COMPLIANT, PLASTIC, LQFP-100
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | QFP | |
| Package Description | LQFP, QFP100,.63X.87 | |
| Pin Count | 100 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PQFP-G100 | |
| JESD-609 Code | e6 | |
| Length | 20 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 100 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LQFP | |
| Package Equivalence Code | QFP100,.63X.87 | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK, LOW PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.7 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.02 A | |
| Supply Current-Max | 0.38 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | QUAD | |
| Width | 14 mm |
Alternate Parts for EDD1232AAFA-6B-E
This table gives cross-reference parts and alternative options found for EDD1232AAFA-6B-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDD1232AAFA-6B-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V4M32LG-45 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 0.65 MM PITCH, PLASTIC, TQFP-100 | Micron Technology Inc | EDD1232AAFA-6B-E vs MT46V4M32LG-45 |
| K4D263238D-QC50 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, TQFP-100 | Samsung Semiconductor | EDD1232AAFA-6B-E vs K4D263238D-QC50 |
| M13S128324A-6LG | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 14 X 20 MM, 0.65 MM PITCH, LEAD FREE, LQFP-100 | Elite Semiconductor Memory Technology Inc | EDD1232AAFA-6B-E vs M13S128324A-6LG |
| MT46V4M32LG-5 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 0.65 MM PITCH, PLASTIC, TQFP-100 | Micron Technology Inc | EDD1232AAFA-6B-E vs MT46V4M32LG-5 |
| K4D263238M-QC50 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | Samsung Semiconductor | EDD1232AAFA-6B-E vs K4D263238M-QC50 |
| M13S128324A-6LIG | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 14 X 20 MM, 0.65 MM PITCH, LEAD FREE, LQFP-100 | Elite Semiconductor Memory Technology Inc | EDD1232AAFA-6B-E vs M13S128324A-6LIG |
| K4D263238M-QC500 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | Samsung Semiconductor | EDD1232AAFA-6B-E vs K4D263238M-QC500 |
| K4D263238F-QC50 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | Samsung Semiconductor | EDD1232AAFA-6B-E vs K4D263238F-QC50 |
| M13S128324A-5LIG | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 14 X 20 MM, 0.65 MM PITCH, LEAD FREE, LQFP-100 | Elite Semiconductor Memory Technology Inc | EDD1232AAFA-6B-E vs M13S128324A-5LIG |
| K4D263238M-QC450 | DDR DRAM, 4MX32, 0.7ns, CMOS, PQFP100, 20 X 14 MM, 0.65 MM PITCH, TQFP-100 | Samsung Semiconductor | EDD1232AAFA-6B-E vs K4D263238M-QC450 |