Part Details for EDD1216AJTA-6B-E by Elpida Memory Inc
Overview of EDD1216AJTA-6B-E by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for EDD1216AJTA-6B-E
EDD1216AJTA-6B-E CAD Models
EDD1216AJTA-6B-E Part Data Attributes:
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EDD1216AJTA-6B-E
Elpida Memory Inc
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Datasheet
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EDD1216AJTA-6B-E
Elpida Memory Inc
DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | TSOP2 | |
| Package Description | ROHS COMPLIANT, PLASTIC, TSOP2-66 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.003 A | |
| Supply Current-Max | 0.33 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10.16 mm |
Alternate Parts for EDD1216AJTA-6B-E
This table gives cross-reference parts and alternative options found for EDD1216AJTA-6B-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDD1216AJTA-6B-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IS43R16800CC-6TL-TR | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 | Integrated Silicon Solution Inc | EDD1216AJTA-6B-E vs IS43R16800CC-6TL-TR |
| N2DS12Q16BT-6K | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | Nanya Technology Corporation | EDD1216AJTA-6B-E vs N2DS12Q16BT-6K |
| V58C2128164SCI6 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | EDD1216AJTA-6B-E vs V58C2128164SCI6 |
| K4D261638K-TC500 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | EDD1216AJTA-6B-E vs K4D261638K-TC500 |
| V58C2128164SBT6I | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | EDD1216AJTA-6B-E vs V58C2128164SBT6I |
| MT46V8M16TG-6T:B | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | EDD1216AJTA-6B-E vs MT46V8M16TG-6T:B |
| K4H281638E-TLB30 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | EDD1216AJTA-6B-E vs K4H281638E-TLB30 |
| M13S128168A-6TG | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Elite Semiconductor Memory Technology Inc | EDD1216AJTA-6B-E vs M13S128168A-6TG |
| M13S128168A-5TG | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Elite Semiconductor Memory Technology Inc | EDD1216AJTA-6B-E vs M13S128168A-5TG |
| K4H281638O-LCCC0 | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | EDD1216AJTA-6B-E vs K4H281638O-LCCC0 |