Datasheets
ECH8601R by:

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ECH8, 8 PIN

Part Details for ECH8601R by SANYO Semiconductor Co Ltd

Overview of ECH8601R by SANYO Semiconductor Co Ltd

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for ECH8601R

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ECH8601R Part Data Attributes:

ECH8601R SANYO Semiconductor Co Ltd
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ECH8601R SANYO Semiconductor Co Ltd Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ECH8, 8 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer SANYO SEMICONDUCTOR CO LTD
Package Description SMALL OUTLINE, R-PDSO-F8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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