Datasheets
ECH8310 by:

Power Field-Effect Transistor, 9A I(D), 30V, 0.017ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ECH8, 8 PIN

Part Details for ECH8310 by SANYO Semiconductor Co Ltd

Overview of ECH8310 by SANYO Semiconductor Co Ltd

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Part Details for ECH8310

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ECH8310 Part Data Attributes

ECH8310 SANYO Semiconductor Co Ltd
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ECH8310 SANYO Semiconductor Co Ltd Power Field-Effect Transistor, 9A I(D), 30V, 0.017ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ECH8, 8 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer SANYO SEMICONDUCTOR CO LTD
Package Description SMALL OUTLINE, R-PDSO-F8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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