Part Details for EBD21RD4ADNA-6B by Elpida Memory Inc
Overview of EBD21RD4ADNA-6B by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Energy and Power Systems
Part Details for EBD21RD4ADNA-6B
EBD21RD4ADNA-6B CAD Models
EBD21RD4ADNA-6B Part Data Attributes
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EBD21RD4ADNA-6B
Elpida Memory Inc
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Datasheet
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EBD21RD4ADNA-6B
Elpida Memory Inc
DDR DRAM Module, 256MX72, 0.7ns, CMOS, DIMM-184
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | DIMM | |
| Package Description | DIMM, | |
| Pin Count | 184 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N184 | |
| JESD-609 Code | e0 | |
| Memory Density | 19327352832 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 72 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX72 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL |
Alternate Parts for EBD21RD4ADNA-6B
This table gives cross-reference parts and alternative options found for EBD21RD4ADNA-6B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EBD21RD4ADNA-6B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYMD525G726ALS4M-K | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | SK Hynix Inc | EBD21RD4ADNA-6B vs HYMD525G726ALS4M-K |
| HYMD525G726S4M-H | DDR DRAM Module, 256MX72, 0.75ns, CMOS, 5.250 X 1.200 X 0.150 INCH, DIMM-184 | SK Hynix Inc | EBD21RD4ADNA-6B vs HYMD525G726S4M-H |
| W3EG72255S265JD3S | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Microsemi Corporation | EBD21RD4ADNA-6B vs W3EG72255S265JD3S |
| W3EG2128M72AFSR335AD3IMG | DDR DRAM Module, 256MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | Microsemi Corporation | EBD21RD4ADNA-6B vs W3EG2128M72AFSR335AD3IMG |
| W3EG2128M72AFSR335D3SG | DDR DRAM Module, 256MX72, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | Microsemi Corporation | EBD21RD4ADNA-6B vs W3EG2128M72AFSR335D3SG |
| W3EG72255S263D3SG | DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | Microsemi Corporation | EBD21RD4ADNA-6B vs W3EG72255S263D3SG |
| M381L5623MTM-LA2 | DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | EBD21RD4ADNA-6B vs M381L5623MTM-LA2 |
| M312L5620AUS-CB0 | DDR DRAM Module, 256MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | Samsung Semiconductor | EBD21RD4ADNA-6B vs M312L5620AUS-CB0 |
| MT18VDDT25672AIG-26AXX | DDR DRAM Module, 256MX72, 0.75ns, CMOS, DIMM-184 | Micron Technology Inc | EBD21RD4ADNA-6B vs MT18VDDT25672AIG-26AXX |
| MT36VDDT25672DY-265XX | DDR DRAM Module, 256MX72, 0.75ns, CMOS, MO-206, DIMM-184 | Micron Technology Inc | EBD21RD4ADNA-6B vs MT36VDDT25672DY-265XX |