Part Details for EBD12UB8ALF-75 by Elpida Memory Inc
Overview of EBD12UB8ALF-75 by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for EBD12UB8ALF-75
EBD12UB8ALF-75 CAD Models
EBD12UB8ALF-75 Part Data Attributes
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EBD12UB8ALF-75
Elpida Memory Inc
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Datasheet
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EBD12UB8ALF-75
Elpida Memory Inc
DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM184 | |
| Pin Count | 184 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N184 | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM184 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for EBD12UB8ALF-75
This table gives cross-reference parts and alternative options found for EBD12UB8ALF-75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EBD12UB8ALF-75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT8VDDT1664AG-40BXX | DDR DRAM Module, 16MX64, 0.7ns, CMOS, UDIMM-184 | Micron Technology Inc | EBD12UB8ALF-75 vs MT8VDDT1664AG-40BXX |
| V826616J24SXTG-C0 | DDR DRAM Module, 16MX64, 0.7ns, CMOS, DIMM-184 | Mosel Vitelic Corporation | EBD12UB8ALF-75 vs V826616J24SXTG-C0 |
| VR4CU166428CBK | DDR DRAM Module, 16MX64, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | Viking Technology | EBD12UB8ALF-75 vs VR4CU166428CBK |
| MT4VDDT1664AIG-265XX | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Micron Technology Inc | EBD12UB8ALF-75 vs MT4VDDT1664AIG-265XX |
| M368L1713BT1-LA0 | DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184 | Samsung Semiconductor | EBD12UB8ALF-75 vs M368L1713BT1-LA0 |
| MT4VDDT1664AY-26AXX | DDR DRAM Module, 16MX64, 0.75ns, CMOS, LEAD FREE, DIMM-184 | Micron Technology Inc | EBD12UB8ALF-75 vs MT4VDDT1664AY-26AXX |
| HYMD116645BL8-H | DDR DRAM Module, 16MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 | SK Hynix Inc | EBD12UB8ALF-75 vs HYMD116645BL8-H |
| WED3EG6418SL262D3 | DDR DRAM Module, 16MX64, CMOS, DIMM-184 | Microsemi Corporation | EBD12UB8ALF-75 vs WED3EG6418SL262D3 |
| M368L1713ETM-CAA | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | EBD12UB8ALF-75 vs M368L1713ETM-CAA |
| WED3EG6418SL265D3 | DDR DRAM Module, 16MX64, CMOS, DIMM-184 | Microsemi Corporation | EBD12UB8ALF-75 vs WED3EG6418SL265D3 |