Datasheets
DU2860U by:
MACOM
MACOM
TE Connectivity
Not Found

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Part Details for DU2860U by MACOM

Results Overview of DU2860U by MACOM

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

DU2860U Information

DU2860U by MACOM is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for DU2860U

Part # Distributor Description Stock Price Buy
DISTI # 1465-DU2860U-ND
DigiKey RF MOSFET LDMOS 28V Min Qty: 20 Lead time: 26 Weeks Container: Bulk Temporarily Out of Stock
  • 20 $135.4655
$135.4655 Buy Now
DISTI # 937-DU2860U
Mouser Electronics RF MOSFET Transistors Transistor.Mosfet,60W,28V,2-175MHz RoHS: Compliant 20
  • 1 $165.5100
  • 10 $140.4300
$140.4300 / $165.5100 Buy Now
DISTI # DU2860U
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 20 0
  • 20 $111.0000
$111.0000 Buy Now

US Tariff Estimator: DU2860U by MACOM

Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.

DU2860U
MACOM
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Estimator Results:
Tariff Percentage Tariff Calculation
Import Value
$.
Total Duty
$.
Total Estimate
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$.
Based on tariff data from 11/4/2025

Part Details for DU2860U

DU2860U Part Data Attributes

DU2860U MACOM
Buy Now Datasheet
Compare Parts:
DU2860U MACOM RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Reach Compliance Code Compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Samacsys Manufacturer MACOM
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 12 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 24 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F6
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 159 W
Power Dissipation-Max (Abs) 159 W
Power Gain-Min (Gp) 13 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for DU2860U

This table gives cross-reference parts and alternative options found for DU2860U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DU2860U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BLF246 NXP Semiconductors Check for Price TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power DU2860U vs BLF246
MRF173 Motorola Mobility LLC Check for Price VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN DU2860U vs MRF173
MRF173 MACOM Check for Price RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-11, 4 PIN DU2860U vs MRF173
BLF246,112 NXP Semiconductors Check for Price BLF246 DU2860U vs BLF246,112
MRF140 TE Connectivity Check for Price VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN DU2860U vs MRF140
MRF173CQ MACOM Check for Price RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 316-01, 6 PIN DU2860U vs MRF173CQ
VFT45-28 Advanced Semiconductor Inc Check for Price RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DU2860U vs VFT45-28
MRF140 Motorola Mobility LLC Check for Price VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET DU2860U vs MRF140
MRF173 Advanced Semiconductor Inc Check for Price RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 DU2860U vs MRF173
MRF172 Motorola Mobility LLC Check for Price VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET DU2860U vs MRF172
equivalents icon

DU2860U Related Parts

DU2860U Frequently Asked Questions (FAQ)

  • MACOM recommends a 4-layer PCB with a solid ground plane, and a microstrip transmission line design for the RF signal path. A detailed layout guide is available from MACOM upon request.

  • The DU2860U requires a bias voltage of 5V and a bias current of 350mA. Ensure the bias circuit is designed to provide a low impedance path to ground and a stable voltage supply.

  • The DU2860U is rated for operation from -40°C to +85°C. However, for optimal performance, it is recommended to operate the device within a temperature range of 0°C to +70°C.

  • MACOM recommends using a combination of visual inspection, signal integrity analysis, and RF testing to troubleshoot issues with the DU2860U. Consult the MACOM application note AN-2151 for detailed troubleshooting guidelines.

  • While the DU2860U is designed for 50 ohm systems, it can be used in non-50 ohm systems with proper impedance matching. However, this may require additional circuitry and may affect the device's performance and reliability.