Part Details for DU2860U by MACOM
Results Overview of DU2860U by MACOM
- Distributor Offerings: (3 listings)
 - Number of FFF Equivalents: (0 replacements)
 - Tariff Estimator: (Available) NEW
 - Number of Functional Equivalents: (10 options)
 - CAD Models: (Available)
 - Part Data Attributes: (Available)
 - Reference Designs: (Not Available)
 
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DU2860U Information
                            DU2860U by MACOM is an RF Power Field-Effect Transistor.
                            RF Power Field-Effect Transistors are under the broader part category of Transistors.
                        
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for DU2860U
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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                                DISTI #
                                1465-DU2860U-ND
                            
                        
                     
                 | 
                DigiKey | RF MOSFET LDMOS 28V Min Qty: 20 Lead time: 26 Weeks Container: Bulk | Temporarily Out of Stock | 
                    
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                $135.4655 | Buy Now | 
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                                DISTI #
                                937-DU2860U
                            
                        
                     
                 | 
                Mouser Electronics | RF MOSFET Transistors Transistor.Mosfet,60W,28V,2-175MHz RoHS: Compliant | 20 | 
                    
  | 
                $140.4300 / $165.5100 | Buy Now | 
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                                DISTI #
                                DU2860U
                            
                        
                     
                 | 
                Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 20 | 0 | 
                    
  | 
                $111.0000 | Buy Now | 
US Tariff Estimator: DU2860U by MACOM
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for DU2860U
DU2860U CAD Models
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DU2860U Part Data Attributes
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                                        DU2860U
                                        MACOM
                                     
                                    Buy Now
                                    
                                         Datasheet
                                    
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                                        Compare Parts:
                                     
                                    
                                            DU2860U
                                            MACOM
                                            RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
                                         
                                        
                                        Select a part to compare:  | 
                            
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Samacsys Manufacturer | MACOM | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 12 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 24 pF | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | O-CRFM-F6 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 159 W | |
| Power Dissipation-Max (Abs) | 159 W | |
| Power Gain-Min (Gp) | 13 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | FLAT | |
| Terminal Position | RADIAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | 
Alternate Parts for DU2860U
This table gives cross-reference parts and alternative options found for DU2860U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DU2860U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare | 
|---|---|---|---|---|
| BLF246 | NXP Semiconductors | Check for Price | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power | DU2860U vs BLF246 | 
| MRF173 | Motorola Mobility LLC | Check for Price | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN | DU2860U vs MRF173 | 
| MRF173 | MACOM | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-11, 4 PIN | DU2860U vs MRF173 | 
| BLF246,112 | NXP Semiconductors | Check for Price | BLF246 | DU2860U vs BLF246,112 | 
| MRF140 | TE Connectivity | Check for Price | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN | DU2860U vs MRF140 | 
| MRF173CQ | MACOM | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 316-01, 6 PIN | DU2860U vs MRF173CQ | 
| VFT45-28 | Advanced Semiconductor Inc | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | DU2860U vs VFT45-28 | 
| MRF140 | Motorola Mobility LLC | Check for Price | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | DU2860U vs MRF140 | 
| MRF173 | Advanced Semiconductor Inc | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 | DU2860U vs MRF173 | 
| MRF172 | Motorola Mobility LLC | Check for Price | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | DU2860U vs MRF172 | 
DU2860U Frequently Asked Questions (FAQ)
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MACOM recommends a 4-layer PCB with a solid ground plane, and a microstrip transmission line design for the RF signal path. A detailed layout guide is available from MACOM upon request.
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The DU2860U requires a bias voltage of 5V and a bias current of 350mA. Ensure the bias circuit is designed to provide a low impedance path to ground and a stable voltage supply.
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The DU2860U is rated for operation from -40°C to +85°C. However, for optimal performance, it is recommended to operate the device within a temperature range of 0°C to +70°C.
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MACOM recommends using a combination of visual inspection, signal integrity analysis, and RF testing to troubleshoot issues with the DU2860U. Consult the MACOM application note AN-2151 for detailed troubleshooting guidelines.
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While the DU2860U is designed for 50 ohm systems, it can be used in non-50 ohm systems with proper impedance matching. However, this may require additional circuitry and may affect the device's performance and reliability.