Part Details for DU28120V by MACOM
Overview of DU28120V by MACOM
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DU28120V
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1465-DU28120V-ND
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DigiKey | RF MOSFET 28V 8L-FLG Min Qty: 20 Lead time: 24 Weeks Container: Bulk | Temporarily Out of Stock |
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$149.6375 | Buy Now |
DISTI #
937-DU28120V
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Mouser Electronics | RF MOSFET Transistors Transistor,Mosfet,120W,2-175MHz,28V RoHS: Compliant | 0 |
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$158.5800 | Order Now |
DISTI #
DU28120V
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 900 |
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$165.9200 | Buy Now |
Part Details for DU28120V
DU28120V CAD Models
DU28120V Part Data Attributes
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DU28120V
MACOM
Buy Now
Datasheet
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Compare Parts:
DU28120V
MACOM
RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC | |
Package Description | FLANGE MOUNT, R-CDFM-F8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | MACOM | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 65 V | |
Drain Current-Max (ID) | 12 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | R-CDFM-F8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 200 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |