Datasheets
DU28120V by:
MACOM
MACOM
TE Connectivity
Not Found

RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Part Details for DU28120V by MACOM

Overview of DU28120V by MACOM

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Price & Stock for DU28120V

Part # Distributor Description Stock Price Buy
DISTI # 1465-DU28120V-ND
DigiKey RF MOSFET 28V 8L-FLG Min Qty: 20 Lead time: 24 Weeks Container: Bulk Temporarily Out of Stock
  • 20 $149.6375
$149.6375 Buy Now
DISTI # 937-DU28120V
Mouser Electronics RF MOSFET Transistors Transistor,Mosfet,120W,2-175MHz,28V RoHS: Compliant 0
  • 20 $158.5800
$158.5800 Order Now
DISTI # DU28120V
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 900
  • 1 $165.9200
$165.9200 Buy Now

Part Details for DU28120V

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DU28120V Part Data Attributes

DU28120V MACOM
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DU28120V MACOM RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description FLANGE MOUNT, R-CDFM-F8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer MACOM
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 12 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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