Datasheets
DU2810S by:

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Part Details for DU2810S by MACOM

Overview of DU2810S by MACOM

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for DU2810S

Part # Distributor Description Stock Price Buy
DISTI # 1465-DU2810S-ND
DigiKey RF MOSFET LDMOS 28V Min Qty: 50 Lead time: 24 Weeks Container: Bulk Temporarily Out of Stock
  • 50 $45.3288
$45.3288 Buy Now
DISTI # 937-DU2810S
Mouser Electronics RF MOSFET Transistors Transistor,Mosfet,10W,28V,2-175MHz RoHS: Compliant 1
  • 1 $50.7100
  • 10 $45.1900
  • 20 $43.9100
  • 60 $43.2600
  • 100 $42.7600
$42.7600 / $50.7100 Buy Now
DISTI # 35868258
Verical Trans RF MOSFET N-CH 65V 2.8A 4-Pin RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 1828 Americas - 49
  • 2 $57.2500
$57.2500 Buy Now
DISTI # DU2810S
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 60 49
  • 60 $33.6600
$33.6600 Buy Now

Part Details for DU2810S

DU2810S Part Data Attributes:

DU2810S MACOM
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Compare Parts:
DU2810S MACOM RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Samacsys Manufacturer MACOM
Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 2.8 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4.6 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 35 W
Power Dissipation-Max (Abs) 35 W
Power Gain-Min (Gp) 13 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for DU2810S

This table gives cross-reference parts and alternative options found for DU2810S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DU2810S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SD2904 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, M113, 4 PIN STMicroelectronics DU2810S vs SD2904
MRF137 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC DU2810S vs MRF137
MRF136 RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc DU2810S vs MRF136
MRF136 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN TE Connectivity DU2810S vs MRF136
MRF136 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN Motorola Mobility LLC DU2810S vs MRF136
MRF171A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN Motorola Mobility LLC DU2810S vs MRF171A
VFT15-28 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc DU2810S vs VFT15-28
MRF137 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN MACOM DU2810S vs MRF137
UF2820P 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU2810S vs UF2820P
MRF136Y RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 319B-02, 4 PIN MACOM DU2810S vs MRF136Y

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