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RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1465-DU2810S-ND
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DigiKey | RF MOSFET LDMOS 28V Min Qty: 50 Lead time: 24 Weeks Container: Bulk | Temporarily Out of Stock |
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$45.3288 | Buy Now |
DISTI #
937-DU2810S
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Mouser Electronics | RF MOSFET Transistors Transistor,Mosfet,10W,28V,2-175MHz RoHS: Compliant | 1 |
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$42.7600 / $50.7100 | Buy Now |
DISTI #
35868258
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Verical | Trans RF MOSFET N-CH 65V 2.8A 4-Pin RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 1828 | Americas - 49 |
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$57.2500 | Buy Now |
DISTI #
DU2810S
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 60 | 49 |
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$33.6600 | Buy Now |
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DU2810S
MACOM
Buy Now
Datasheet
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DU2810S
MACOM
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC | |
Package Description | FLANGE MOUNT, O-CRFM-F4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Samacsys Manufacturer | MACOM | |
Additional Feature | LOW NOISE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
Drain Current-Max (ID) | 2.8 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4.6 pF | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | O-CRFM-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 35 W | |
Power Dissipation-Max (Abs) | 35 W | |
Power Gain-Min (Gp) | 13 dB | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for DU2810S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DU2810S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SD2904 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, M113, 4 PIN | STMicroelectronics | DU2810S vs SD2904 |
MRF137 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | Motorola Mobility LLC | DU2810S vs MRF137 |
MRF136 | RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 | Advanced Semiconductor Inc | DU2810S vs MRF136 |
MRF136 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN | TE Connectivity | DU2810S vs MRF136 |
MRF136 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN | Motorola Mobility LLC | DU2810S vs MRF136 |
MRF171A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN | Motorola Mobility LLC | DU2810S vs MRF171A |
VFT15-28 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | Advanced Semiconductor Inc | DU2810S vs VFT15-28 |
MRF137 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN | MACOM | DU2810S vs MRF137 |
UF2820P | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | TE Connectivity | DU2810S vs UF2820P |
MRF136Y | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 319B-02, 4 PIN | MACOM | DU2810S vs MRF136Y |