Datasheets
DMWS120H100SM4 by: Diodes Incorporated

Power Field-Effect Transistor, 37.2A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,

Part Details for DMWS120H100SM4 by Diodes Incorporated

Results Overview of DMWS120H100SM4 by Diodes Incorporated

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DMWS120H100SM4 Information

DMWS120H100SM4 by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for DMWS120H100SM4

Part # Distributor Description Stock Price Buy
DISTI # 31-DMWS120H100SM4-ND
DigiKey SIC MOSFET BVDSS: >1000V TO247-4 Min Qty: 1 Lead time: 40 Weeks Container: Tube 27
In Stock
  • 1 $19.9000
  • 30 $14.0043
  • 120 $11.9088
$11.9088 / $19.9000 Buy Now
DISTI # DMWS120H100SM4
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 37.2 A, 1200 V, 100 Milliohms, TO-247 (Type WH), 4 Pins -... Rail/Tube (Alt: DMWS120H100SM4) more RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 40 Weeks, 0 Days Container: Tube 1830 Factory Stock
  • 30 $11.4784
  • 60 $11.4097
  • 120 $11.3418
  • 180 $11.2880
  • 240 $11.2083
$11.2083 / $11.4784 Buy Now
DISTI # 621-DMWS120H100SM4
Mouser Electronics SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS RoHS: Compliant 55
  • 1 $19.5100
  • 30 $14.2900
  • 60 $12.7400
  • 120 $11.9000
  • 510 $11.8300
$11.8300 / $19.5100 Buy Now
Future Electronics DMWS120 Series 1200 V 37.2 A 100 mOhm Single N-Channel SiC MOSFET - TO-247-4 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 40 Weeks Container: Tube 0
Tube
  • 30 $11.7900
  • 60 $11.7200
  • 90 $11.6900
  • 150 $11.6400
  • 300 $11.5400
$11.5400 / $11.7900 Buy Now
DISTI # DMWS120H100SM4
Avnet Silica Silicon Carbide MOSFET Single N Channel 372 A 1200 V 100 Milliohms TO247 Type WH 4 Pins (Alt: DMWS12... 0H100SM4) more RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 42 Weeks, 0 Days Silica - 60
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 30 60
  • 30 $21.3800
  • 60 $19.7800
$19.7800 / $21.3800 Buy Now

Part Details for DMWS120H100SM4

DMWS120H100SM4 Part Data Attributes

DMWS120H100SM4 Diodes Incorporated
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DMWS120H100SM4 Diodes Incorporated Power Field-Effect Transistor, 37.2A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 40 Weeks
Samacsys Manufacturer Diodes Incorporated
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 37.2 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4.16 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Pulsed Drain Current-Max (IDM) 87 A
Reference Standard MIL-STD-202
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE