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Power Field-Effect Transistor, 37.2A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
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DMWS120H100SM4 by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMWS120H100SM4-ND
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DigiKey | SIC MOSFET BVDSS: >1000V TO247-4 Min Qty: 1 Lead time: 40 Weeks Container: Tube |
27 In Stock |
|
$11.9088 / $19.9000 | Buy Now |
DISTI #
DMWS120H100SM4
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Avnet Americas | Silicon Carbide MOSFET, Single, N Channel, 37.2 A, 1200 V, 100 Milliohms, TO-247 (Type WH), 4 Pins -... more RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 40 Weeks, 0 Days Container: Tube | 1830 Factory Stock |
|
$11.2083 / $11.4784 | Buy Now |
DISTI #
621-DMWS120H100SM4
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Mouser Electronics | SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS RoHS: Compliant | 55 |
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$11.8300 / $19.5100 | Buy Now |
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Future Electronics | DMWS120 Series 1200 V 37.2 A 100 mOhm Single N-Channel SiC MOSFET - TO-247-4 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 40 Weeks Container: Tube |
0 Tube |
|
$11.5400 / $11.7900 | Buy Now |
DISTI #
DMWS120H100SM4
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Avnet Silica | Silicon Carbide MOSFET Single N Channel 372 A 1200 V 100 Milliohms TO247 Type WH 4 Pins (Alt: DMWS12... more RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 42 Weeks, 0 Days | Silica - 60 |
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Buy Now | |
|
New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 30 | 60 |
|
$19.7800 / $21.3800 | Buy Now |
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DMWS120H100SM4
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMWS120H100SM4
Diodes Incorporated
Power Field-Effect Transistor, 37.2A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 40 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 37.2 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4.16 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T4 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 208 W | |
Pulsed Drain Current-Max (IDM) | 87 A | |
Reference Standard | MIL-STD-202 | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |