Part Details for DMTH6004SPSQ-13 by Diodes Incorporated
Overview of DMTH6004SPSQ-13 by Diodes Incorporated
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMTH6004SPSQ-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMTH6004SPSQ-13CT-ND
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DigiKey | MOSFET N-CH 60V 100A PWRDI5060 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2500 In Stock |
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$0.9502 / $2.1900 | Buy Now |
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DISTI #
DMTH6004SPSQ-13
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Avnet Americas | MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K - Tape and Reel (Alt: DMTH6004SPSQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 307500 Factory Stock |
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$0.9114 / $1.0768 | Buy Now |
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DISTI #
621-DMTH6004SPSQ-13
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Mouser Electronics | MOSFET 60V 175c N-Ch FET 3.1mOhm 10Vgs 100A RoHS: Compliant | 1343 |
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$0.9500 / $2.1900 | Buy Now |
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Future Electronics | MOSFET 60V 175c N-Ch FET 3.1mOhm 10Vgs 100A RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 | 0 |
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$0.9680 | Buy Now |
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DISTI #
DMTH6004SPSQ-13
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Avnet Silica | MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K (Alt: DMTH6004SPSQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 2500 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 2500 |
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$1.6100 | Buy Now |
Part Details for DMTH6004SPSQ-13
DMTH6004SPSQ-13 CAD Models
DMTH6004SPSQ-13 Part Data Attributes:
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DMTH6004SPSQ-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMTH6004SPSQ-13
Diodes Incorporated
Power Field-Effect Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.0031 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 105.2 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Reference Standard | AEC-Q101; IATF 16949; MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |