DMTH4014LDVW-13
Diodes Incorporated
Description: Power Field-Effect Transistor, 10.2A I(D), 40V, 0.015ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Overview of DMTH4014LDVW-13 by Diodes Incorporated

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  • Distributor Offerings: ( 6 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation Motor control systems

Price & Stock for DMTH4014LDVW-13 by Diodes Incorporated

Part # Manufacturer Description Stock Price Buy
DISTI # 31-DMTH4014LDVW-13TR-ND
DigiKey MOSFET 2N-CH 40V 10.2A PWRDI3333 Min Qty: 3000 Lead time: 8 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 3,000 $0.2336
  • 6,000 $0.2213
  • 9,000 $0.2091
$0.2091 / $0.2336 Buy Now
DISTI # DMTH4014LDVW-13
Avnet Americas Transistor MOSFET Array Dual N-Channel 40V 27.5A 8-Pin PowerDI3333 T/R - Tape and Reel (Alt: DMTH4014LDVW-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 24000 Factory Stock
  • 3,000 $0.2451
  • 6,000 $0.2363
  • 12,000 $0.2292
  • 18,000 $0.2225
  • 24,000 $0.2141
  • 30,000 $0.2108
  • 300,000 $0.2074
$0.2074 / $0.2451 Buy Now
DISTI # 621-DMTH4014LDVW-13
Mouser Electronics MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 3K RoHS: Compliant 0
  • 3,000 $0.2440
  • 6,000 $0.2270
  • 9,000 $0.2190
  • 24,000 $0.2110
$0.2110 / $0.2440 Order Now
Future Electronics   RoHS: Non Compliant pbFree: No Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks 0
  • 3,000 $0.2240
$0.2240 Buy Now
DISTI # DMTH4014LDVW-13
Avnet Silica Transistor MOSFET Array Dual N-Channel 40V 27.5A 8-Pin PowerDI3333 T/R (Alt: DMTH4014LDVW-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 3000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.3758
$0.3758 Buy Now

CAD Models for DMTH4014LDVW-13 by Diodes Incorporated
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Part Data Attributes for DMTH4014LDVW-13 by Diodes Incorporated

DMTH4014LDVW-13
Diodes Incorporated
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
DIODES INC
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
8 Weeks
Samacsys Manufacturer
Diodes Incorporated
Avalanche Energy Rating (Eas)
19.6 mJ
Case Connection
DRAIN
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
10.2 A
Drain-source On Resistance-Max
0.015 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
21 pF
JESD-30 Code
S-PDSO-F8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.6 W
Pulsed Drain Current-Max (IDM)
110 A
Reference Standard
MIL-STD-202
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. DMTH4014LDVW-13
    Diodes Incorporated
    Power Field-Effect Transistor, 10.2A I(D), 40V, 0.015ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
    VS

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