Datasheets
DMTH4005SK3-13 by: Diodes Incorporated

Power Field-Effect Transistor,

Part Details for DMTH4005SK3-13 by Diodes Incorporated

Overview of DMTH4005SK3-13 by Diodes Incorporated

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for DMTH4005SK3-13

Part # Distributor Description Stock Price Buy
DISTI # DMTH4005SK3-13DICT-ND
DigiKey MOSFET N-CH 40V 95A TO252 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $0.8000
  • 2,500 $0.3053
  • 5,000 $0.2892
  • 12,500 $0.2678
  • 25,000 $0.2651
$0.2651 / $0.8000 Buy Now
DISTI # DMTH4005SK3-13
Avnet Americas MOSFET BVDSS: 31V~40V TO252 T&R 2.5K - Tape and Reel (Alt: DMTH4005SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel 17500 Factory Stock
  • 2,500 $0.3107
  • 5,000 $0.2996
  • 10,000 $0.2906
  • 15,000 $0.2821
  • 20,000 $0.2715
  • 25,000 $0.2672
  • 250,000 $0.2630
$0.2630 / $0.3107 Buy Now
DISTI # 621-DMTH4005SK3-13
Mouser Electronics MOSFET MOSFET BVDSS: RoHS: Compliant 2441
  • 1 $0.8000
  • 10 $0.7070
  • 100 $0.4820
  • 500 $0.4030
  • 1,000 $0.3430
  • 2,500 $0.3050
  • 5,000 $0.2890
  • 10,000 $0.2670
  • 25,000 $0.2650
$0.2650 / $0.8000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 0
  • 2,500 $0.2800
$0.2800 Buy Now
DISTI # DMTH4005SK3-13
Avnet Silica MOSFET BVDSS: 31V~40V TO252 T&R 2.5K (Alt: DMTH4005SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Silica - 2500
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $0.4146
$0.4146 Buy Now

Part Details for DMTH4005SK3-13

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DMTH4005SK3-13 Part Data Attributes:

DMTH4005SK3-13 Diodes Incorporated
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DMTH4005SK3-13 Diodes Incorporated Power Field-Effect Transistor,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Avalanche Energy Rating (Eas) 52.8 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 95 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 179 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 150 A
Reference Standard MIL-STD-202
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for DMTH4005SK3-13

This table gives cross-reference parts and alternative options found for DMTH4005SK3-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMTH4005SK3-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD036N04LGATMA1 Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Infineon Technologies AG DMTH4005SK3-13 vs IPD036N04LGATMA1
IPD80N04S3-06 Power Field-Effect Transistor, 90A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG DMTH4005SK3-13 vs IPD80N04S3-06
IPD80N04S306ATMA1 Power Field-Effect Transistor, 90A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG DMTH4005SK3-13 vs IPD80N04S306ATMA1
IPD036N04LG Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG DMTH4005SK3-13 vs IPD036N04LG
Part Number Description Manufacturer Compare
IPD80N04S3-06 Power Field-Effect Transistor, 90A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG DMTH4005SK3-13 vs IPD80N04S3-06
IPD80N04S306ATMA1 Power Field-Effect Transistor, 90A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG DMTH4005SK3-13 vs IPD80N04S306ATMA1
IPD036N04LGATMA1 Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Infineon Technologies AG DMTH4005SK3-13 vs IPD036N04LGATMA1
IPD80N04S3-06 90A, 40V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Rochester Electronics LLC DMTH4005SK3-13 vs IPD80N04S3-06
IPD036N04LG Power Field-Effect Transistor, 90A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG DMTH4005SK3-13 vs IPD036N04LG

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