Part Details for DMTH4004SCTB-13 by Diodes Incorporated
Overview of DMTH4004SCTB-13 by Diodes Incorporated
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for DMTH4004SCTB-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMTH4004SCTB-13DICT-ND
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DigiKey | MOSFET N-CH 40V 100A TO263AB T&R Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
800 In Stock |
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$0.6038 / $1.6100 | Buy Now |
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DISTI #
DMTH4004SCTB-13
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Avnet Americas | Power MOSFET, N Channel, 40 V, 100 A, 3 Milliohms, TO-263AB (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: DMTH4004SCTB-13) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Container: Reel | 6400 Factory Stock |
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$0.5989 / $0.7076 | Buy Now |
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DISTI #
621-DMTH4004SCTB-13
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Mouser Electronics | MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A RoHS: Compliant | 0 |
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$0.6900 / $1.6100 | Order Now |
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Future Electronics | N-Channel 40 V 100 A 3 mOhm SMT Enhancement Mode Mosfet - TO-263AB RoHS: Compliant pbFree: Yes Min Qty: 3200 Package Multiple: 800 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.5900 / $0.6400 | Buy Now |
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Future Electronics | N-Channel 40 V 100 A 3 mOhm SMT Enhancement Mode Mosfet - TO-263AB RoHS: Compliant pbFree: Yes Min Qty: 3200 Package Multiple: 800 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.5900 / $0.6400 | Buy Now |
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DISTI #
DMTH4004SCTB-13
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Avnet Asia | Power MOSFET, N Channel, 40 V, 100 A, 3 Milliohms, TO-263AB (D2PAK), 3 Pins, Surface Mount (Alt: DMTH4004SCTB-13) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ |
Part Details for DMTH4004SCTB-13
DMTH4004SCTB-13 CAD Models
DMTH4004SCTB-13 Part Data Attributes
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DMTH4004SCTB-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMTH4004SCTB-13
Diodes Incorporated
Power Field-Effect Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.003 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 102 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 136 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |