Part Details for DMTH10H010LCT by Diodes Incorporated
Overview of DMTH10H010LCT by Diodes Incorporated
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMTH10H010LCT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
DMTH10H010LCTDI-5-ND
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DigiKey | MOSFET N-CH 100V 108A TO220AB Min Qty: 1 Lead time: 24 Weeks Container: Tube |
31 In Stock |
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$0.6563 / $1.5600 | Buy Now |
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DISTI #
DMTH10H010LCT
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Avnet Americas | MOSFET BVDSS: 61V~100V TO220AB TUBE 50PCS - Rail/Tube (Alt: DMTH10H010LCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 24 Weeks, 0 Days Container: Tube | 2150 Factory Stock |
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$0.6510 / $0.7691 | Buy Now |
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DISTI #
621-DMTH10H010LCT
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Mouser Electronics | MOSFET MOSFET BVDSS: 61V-100V | 108 |
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$0.7500 / $1.5600 | Buy Now |
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Future Electronics | MOSFET BVDSS: 61V~100V TO220AB TUBE 50PCS RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk | 0Bulk |
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$0.6900 / $0.8550 | Buy Now |
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DISTI #
DMTH10H010LCT
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TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
|
$0.9300 / $1.5100 | RFQ |
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DISTI #
DMTH10H010LCT
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Avnet Silica | MOSFET BVDSS: 61V~100V TO220AB TUBE 50PCS (Alt: DMTH10H010LCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 26 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMTH10H010LCT
DMTH10H010LCT CAD Models
DMTH10H010LCT Part Data Attributes:
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DMTH10H010LCT
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMTH10H010LCT
Diodes Incorporated
Power Field-Effect Transistor,
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Avalanche Energy Rating (Eas) | 15 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 108 A | |
| Drain-source On Resistance-Max | 0.0095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 44 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 166 W | |
| Pulsed Drain Current-Max (IDM) | 92 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |