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Transistors / Power Field-Effect Transistors / DMTH10H003SPSW-13
Datasheets
DMTH10H003SPSW-13 by:
Diodes Incorporated
Diodes Incorporated
Zetex / Diodes Inc
Not Found

Power Field-Effect Transistor, 166A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for DMTH10H003SPSW-13 by Diodes Incorporated

Results Overview of DMTH10H003SPSW-13 by Diodes Incorporated

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DMTH10H003SPSW-13 Information

DMTH10H003SPSW-13 by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for DMTH10H003SPSW-13

Part # Distributor Description Stock Price Buy
DISTI # 36AJ8876
Newark Mosfet, N-Ch, 100V, 166A, Powerdi 5060 Rohs Compliant: Yes |Diodes Inc. DMTH10H003SPSW-13 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 4062
  • 1 $3.6300
$3.6300 Buy Now
DISTI # 86AK4845
Newark Mosfet, N-Ch, 100V, 166A, Powerdi 5060 Rohs Compliant: Yes |Diodes Inc. DMTH10H003SPSW-13 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $1.9700
$1.9700 Buy Now
DISTI # 31-DMTH10H003SPSW-13CT-ND
DigiKey MOSFET BVDSS: 61V~100V POWERDI50 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2150
In Stock
  • 1 $2.8800
  • 10 $1.9280
  • 100 $1.3566
  • 500 $1.1000
  • 1,000 $1.0172
  • 2,500 $0.9629
$0.9629 / $2.8800 Buy Now
DISTI # DMTH10H003SPSW-13
Avnet Americas MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K - Tape and Reel (Alt: DMTH10H003SPSW-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 20000 Factory Stock
  • 2,500 $0.9898
  • 5,000 $0.9706
  • 10,000 $0.9552
  • 15,000 $0.9398
  • 20,000 $0.9244
$0.9244 / $0.9898 Buy Now
DISTI # 621-DMTH10H003SPSW13
Mouser Electronics MOSFETs MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R 2.5K RoHS: Compliant 2065
  • 1 $2.8500
  • 10 $1.9100
  • 100 $1.3500
  • 250 $1.3400
  • 500 $1.0900
  • 1,000 $1.0200
  • 2,500 $0.9620
$0.9620 / $2.8500 Buy Now
Future Electronics MOSFET, N-CH, 100V, 166A, POWERDI 5060 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks 0
  • 2,500 $0.9880
$0.9880 Buy Now
DISTI # DMTH10H003SPSW-13
Avnet Silica MOSFET BVDSS 61V100V PowerDI50608 TR 25K (Alt: DMTH10H003SPSW-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
LCSC 100V 166A 3m10V30A 1 N-channel MOSFETs ROHS 100
  • 1 $3.2029
  • 10 $2.7627
  • 30 $2.5010
  • 100 $2.2363
  • 500 $2.1147
  • 1,000 $2.0593
$2.0593 / $3.2029 Buy Now
Vyrian Transistors 11758
RFQ

Part Details for DMTH10H003SPSW-13

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DMTH10H003SPSW-13 Part Data Attributes

Parametric Data
DMTH10H003SPSW-13 Diodes Incorporated
Buy Now Datasheet
Compare Parts:
DMTH10H003SPSW-13 Diodes Incorporated Power Field-Effect Transistor, 166A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Diodes Incorporated
Avalanche Energy Rating (Eas) 612 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 166 A
Drain-source On Resistance-Max 0.003 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 34 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Pulsed Drain Current-Max (IDM) 664 A
Reference Standard MIL-STD-202
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

DMTH10H003SPSW-13 Frequently Asked Questions (FAQ)

  • Diodes Incorporated recommends a PCB layout with a solid ground plane and thermal vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended for optimal thermal performance.

  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet. Additionally, ensure good thermal design and heat sinking to keep the junction temperature below the maximum rated value.

  • Diodes Incorporated recommends a soldering profile with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. The device should be soldered using a solder with a melting point of 220°C (428°F) or higher.

  • Yes, the DMTH10H003SPSW-13 is qualified to AEC-Q101 standards, making it suitable for high-reliability and automotive applications. However, it is recommended to consult with Diodes Incorporated's application engineers to ensure the device meets the specific requirements of your application.

  • Diodes Incorporated recommends using a human-body model (HBM) ESD protection of at least 2kV and a machine model (MM) ESD protection of at least 200V to prevent damage to the device.