Part Details for DMT8008LFG-7 by Diodes Incorporated
Overview of DMT8008LFG-7 by Diodes Incorporated
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Environmental Monitoring
Industrial Automation
Agriculture Technology
Medical Imaging
Price & Stock for DMT8008LFG-7
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
68AH9591
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Newark | Mosfet, N-Ch, 80V, 48A, 150Deg C, 1W Rohs Compliant: Yes |Diodes Inc. DMT8008LFG-7 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1753 |
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$0.7820 / $1.5800 | Buy Now |
|
DISTI #
31-DMT8008LFG-7CT-ND
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DigiKey | MOSFET N-CH 80V 16A PWRDI3333 Min Qty: 1 Lead time: 24 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1395 In Stock |
|
$0.5206 / $1.3900 | Buy Now |
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DISTI #
DMT8008LFG-7
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Avnet Americas | N-Channel Enhancement MOSFET 80V 16A 8-Pin PowerDI - Tape and Reel (Alt: DMT8008LFG-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days Container: Reel | 14000 Factory Stock |
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$0.5155 / $0.6090 | Buy Now |
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DISTI #
621-DMT8008LFG-7
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Mouser Electronics | MOSFET MOSFET BVDSS: 61V-100V RoHS: Compliant | 6708 |
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$0.5200 / $1.3900 | Buy Now |
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Future Electronics | DMT Series 80 V 6.9 mOhm 1 W SMT N-Ch Enhancement Mode Mosfet - Power DI-3333-8 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks Container: Reel | 0Reel |
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$0.5300 / $0.5600 | Buy Now |
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DISTI #
DMT8008LFG-7
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Avnet Silica | N-Channel Enhancement MOSFET 80V 16A 8-Pin PowerDI (Alt: DMT8008LFG-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 26 Weeks, 0 Days | Silica - 2000 |
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Buy Now | |
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New Advantage Corporation | MOSFET BVDSS: 61V~100V POWERDI3333-8 T&R 2K RoHS: Compliant Min Qty: 1 Package Multiple: 2000 | 2000 |
|
$0.9516 | Buy Now |
Part Details for DMT8008LFG-7
DMT8008LFG-7 CAD Models
DMT8008LFG-7 Part Data Attributes
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DMT8008LFG-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMT8008LFG-7
Diodes Incorporated
Small Signal Field-Effect Transistor,
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 162 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 48 A | |
| Drain-source On Resistance-Max | 0.0069 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 31 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 23.5 W | |
| Pulsed Drain Current-Max (IDM) | 192 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |