Part Details for DMT6010SCT by Diodes Incorporated
Overview of DMT6010SCT by Diodes Incorporated
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Security and Surveillance
Environmental Monitoring
Internet of Things (IoT)
Space Technology
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
Price & Stock for DMT6010SCT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
DMT6010SCTDI-5-ND
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DigiKey | MOSFET N-CH 60V 98A TO220-3 Min Qty: 1 Lead time: 24 Weeks Container: Tube |
47 In Stock |
|
$0.5260 / $1.4000 | Buy Now |
|
DISTI #
DMT6010SCT
|
Avnet Americas | MOSFET BVDSS: 41V~60V TO220-3 TUBE 50PCS - Rail/Tube (Alt: DMT6010SCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 24 Weeks, 0 Days Container: Tube | 5850 Factory Stock |
|
$0.5208 / $0.6153 | Buy Now |
|
DISTI #
621-DMT6010SCT
|
Mouser Electronics | MOSFET MOSFET BVDSS: 41V-60V RoHS: Compliant | 437 |
|
$0.6000 / $1.4000 | Buy Now |
|
DISTI #
DMT6010SCT
|
TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
|
$0.3200 / $0.7370 | RFQ |
Part Details for DMT6010SCT
DMT6010SCT CAD Models
DMT6010SCT Part Data Attributes
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DMT6010SCT
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMT6010SCT
Diodes Incorporated
Power Field-Effect Transistor,
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 98 A | |
| Drain-source On Resistance-Max | 0.0072 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 85.2 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |