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Power Field-Effect Transistor, 13.3A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK8883
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Newark | Mosfet, N-Ch, 60V, 57A, To-252 Rohs Compliant: Yes |Diodes Inc. DMT6009LK3-13 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1870 |
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$0.4510 / $0.9780 | Buy Now |
DISTI #
DMT6009LK3-13DICT-ND
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DigiKey | MOSFET N-CH 60V 13.3A/57A TO252 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5416 In Stock |
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$0.3639 / $1.1800 | Buy Now |
DISTI #
DMT6009LK3-13
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Avnet Americas | Trans MOSFET N-CH 60V 57A 3-Pin TO-252 T/R - Tape and Reel (Alt: DMT6009LK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 65000 Factory Stock |
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$0.3493 / $0.4014 | Buy Now |
DISTI #
621-DMT6009LK3-13
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Mouser Electronics | MOSFETs 60V N-Ch Enh FET 16Vgss 2.6W 57A RoHS: Compliant | 5053 |
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$0.4160 / $1.1600 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.3600 / $0.3850 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.3600 / $0.3850 | Buy Now |
DISTI #
DMT6009LK3-13
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Avnet Silica | Trans MOSFET N-CH 60V 57A 3-Pin TO-252 T/R (Alt: DMT6009LK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 2500 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 2500 |
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$0.6611 | Buy Now |
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DMT6009LK3-13
Diodes Incorporated
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Datasheet
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Compare Parts:
DMT6009LK3-13
Diodes Incorporated
Power Field-Effect Transistor, 13.3A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | DPAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 20.6 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 13.3 A | |
Drain-source On Resistance-Max | 0.01 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 90 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for DMT6009LK3-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMT6009LK3-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
DMTH6009LK3-13 | Diodes Incorporated | $0.9217 | Power Field-Effect Transistor, 14.2A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | DMT6009LK3-13 vs DMTH6009LK3-13 |