Part Details for DMT6005LSS-13 by Diodes Incorporated
Overview of DMT6005LSS-13 by Diodes Incorporated
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMT6005LSS-13
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK8877
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Newark | Mosfet, N-Ch, 60V, 13.5A, Soic Rohs Compliant: Yes |Diodes Inc. DMT6005LSS-13 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2480 |
|
$0.7400 / $1.5900 | Buy Now |
DISTI #
DMT6005LSS-13DICT-ND
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DigiKey | MOSFET N-CH 60V 13.5A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
6761 In Stock |
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$0.5906 / $1.7100 | Buy Now |
DISTI #
DMT6005LSS-13
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Avnet Americas | MOSFET BVDSS: 41V~60V SO-8 T&R 2.5K - Tape and Reel (Alt: DMT6005LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 5000 Factory Stock |
|
$0.7326 | Buy Now |
DISTI #
621-DMT6005LSS-13
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Mouser Electronics | MOSFETs MOSFET BVDSS: 41V-60V RoHS: Compliant | 2312 |
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$0.6750 / $1.7100 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks | 0 |
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$0.6220 | Buy Now |
DISTI #
DMT6005LSS-13
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TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
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$0.8200 / $1.3200 | RFQ |
DISTI #
DMT6005LSS-13
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Avnet Silica | MOSFET BVDSS: 41V~60V SO-8 T&R 2.5K (Alt: DMT6005LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMT6005LSS-13
DMT6005LSS-13 CAD Models
DMT6005LSS-13 Part Data Attributes
|
DMT6005LSS-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMT6005LSS-13
Diodes Incorporated
Power Field-Effect Transistor,
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Avalanche Energy Rating (Eas) | 98 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 13.5 A | |
Drain-source On Resistance-Max | 0.0072 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 60 pF | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.7 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |