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Part Details for DMT5015LFDF-7 by Diodes Incorporated
Overview of DMT5015LFDF-7 by Diodes Incorporated
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMT5015LFDF-7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH6615
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Newark | Mosfet, N-Ch, 9.1A, 50V, Udfn2020, Channel Type:N Channel, Drain Source Voltage Vds:50V, Continuous Drain Current Id:9.1A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Diodes Inc. DMT5015LFDF-7 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 50V 9.1A 6UDFN / N-Channel 50 V 9.1A (Ta) 820mW (Ta) Surface Mount U-DFN2020-6 (Type F) | 13100 |
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$0.1911 / $0.2866 | Buy Now |
Part Details for DMT5015LFDF-7
DMT5015LFDF-7 CAD Models
DMT5015LFDF-7 Part Data Attributes
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DMT5015LFDF-7
Diodes Incorporated
Buy Now
Datasheet
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DMT5015LFDF-7
Diodes Incorporated
Small Signal Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | U-DFN2020-6, 6 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 10.4 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 9.1 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15.2 pF | |
| JESD-30 Code | S-PDSO-N6 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.97 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |