Part Details for DMT47M2SFVW-13 by Diodes Incorporated
Overview of DMT47M2SFVW-13 by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Robotics and Drones
Price & Stock for DMT47M2SFVW-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMT47M2SFVW-13DI-ND
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DigiKey | MOSFET N-CH 40V PWRDI3333 Min Qty: 3000 Lead time: 24 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2112 / $0.2360 | Buy Now |
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DISTI #
DMT47M2SFVW-13
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Avnet Americas | Transistor MOSFET N-CH 40V 49.1A 8-Pin PowerDI 3333 T/R - Tape and Reel (Alt: DMT47M2SFVW-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel | 15000 Factory Stock |
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$0.2096 / $0.2476 | Buy Now |
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DISTI #
621-DMT47M2SFVW-13
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Mouser Electronics | MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 3K RoHS: Compliant | 0 |
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$0.2110 / $0.2430 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks | 0 |
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$0.2230 | Buy Now |
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DISTI #
DMT47M2SFVW-13
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Avnet Silica | (Alt: DMT47M2SFVW-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMT47M2SFVW-13
DMT47M2SFVW-13 CAD Models
DMT47M2SFVW-13 Part Data Attributes
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DMT47M2SFVW-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMT47M2SFVW-13
Diodes Incorporated
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Date Of Intro | 2019-06-10 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 30.5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 49.1 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 12.4 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 27.1 W | |
| Pulsed Drain Current-Max (IDM) | 196 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |