Part Details for DMT3011LDT-7 by Diodes Incorporated
Overview of DMT3011LDT-7 by Diodes Incorporated
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMT3011LDT-7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMT3011LDT-7DICT-ND
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DigiKey | MOSFET 2N-CH 30V 8A/10.7A 8VDFN Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
8153 In Stock |
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$0.2954 / $0.8900 | Buy Now |
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DISTI #
DMT3011LDT-7
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 8A/28.9A 8-Pin VDFN T/R - Tape and Reel (Alt: DMT3011LDT-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 9000 Factory Stock |
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$0.2930 / $0.3462 | Buy Now |
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DISTI #
621-DMT3011LDT-7
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Mouser Electronics | MOSFET MOSFET BVDSS RoHS: Compliant | 0 |
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$0.3380 / $0.8900 | Order Now |
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Future Electronics | 30V 8A 20 mOhm Dual N-ch V-DFN3030-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2950 / $0.3150 | Buy Now |
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Future Electronics | 30V 8A 20 mOhm Dual N-ch V-DFN3030-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2950 / $0.3150 | Buy Now |
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DISTI #
DMT3011LDT-7
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Avnet Silica | Transistor MOSFET Array Dual N-CH 30V 8A/28.9A 8-Pin VDFN T/R (Alt: DMT3011LDT-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 3000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
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$0.4942 | Buy Now |
Part Details for DMT3011LDT-7
DMT3011LDT-7 CAD Models
DMT3011LDT-7 Part Data Attributes:
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DMT3011LDT-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMT3011LDT-7
Diodes Incorporated
Power Field-Effect Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | V-DFN3030-8, 8 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Avalanche Energy Rating (Eas) | 16.2 mJ | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10.7 A | |
| Drain-source On Resistance-Max | 0.0111 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 13.9 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |