| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
DMT3006LPS-13DICT-ND
|
DigiKey | MOSFET N-CH 30V 16A PWRDI5060 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2458 In Stock |
|
$0.1785 / $0.6100 | Buy Now | |
|
DISTI #
DMT3006LPS-13
|
Avnet Americas | MOSFET BVDSS: 25V~30V POWERDI5060-8 T&R 2.5K - Tape and Reel (Alt: DMT3006LPS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 27500 Factory Stock |
|
$0.1552 | Buy Now | |
|
DISTI #
621-DMT3006LPS-13
|
Mouser Electronics | MOSFETs MOSFET BVDSS: 25V-30V RoHS: Compliant | 2400 |
|
$0.2040 / $0.6100 | Buy Now | |
| Future Electronics | DMT3006LPS Series 30 V 16 A N-Channel Enhancement Mode Mosfet - PowerDI5060-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
|
$0.1750 / $0.1870 | Buy Now | ||
| Future Electronics | DMT3006LPS Series 30 V 16 A N-Channel Enhancement Mode Mosfet - PowerDI5060-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
|
$0.1750 / $0.1870 | Buy Now | ||
|
DISTI #
DMT3006LPS-13
|
Avnet Silica | MOSFET BVDSS: 25V~30V POWERDI5060-8 T&R 2.5K (Alt: DMT3006LPS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 0 |
|
Buy Now | ||
| LCSC | 30V 6m20A10V 3V250uA 1 N-Channel PowerDI-5060-8 MOSFETs ROHS | 1588 |
|
$0.1224 / $0.1807 | Buy Now |
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
DIODES INC
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
8 Weeks
|
|
Samacsys Manufacturer
|
Diodes Incorporated
|
|
Avalanche Energy Rating (Eas)
|
31 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
65 A
|
|
Drain-source On Resistance-Max
|
0.0098 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
72 pF
|
|
JESD-30 Code
|
R-PDSO-F8
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
8
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
42 W
|
|
Pulsed Drain Current-Max (IDM)
|
100 A
|
|
Reference Standard
|
MIL-STD-202
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Matte Tin (Sn)
|
|
Terminal Form
|
FLAT
|
|
Terminal Position
|
DUAL
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
