Part Details for DMT3006LFDFQ-7 by Diodes Incorporated
Overview of DMT3006LFDFQ-7 by Diodes Incorporated
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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Renewable Energy
Automotive
Price & Stock for DMT3006LFDFQ-7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMT3006LFDFQ-7TR-ND
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DigiKey | MOSFET BVDSS: 25V~30V U-DFN2020- Min Qty: 3000 Lead time: 16 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.1324 / $0.1578 | Buy Now |
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DISTI #
DMT3006LFDFQ-7
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Avnet Americas | Transistor MOSFET N-CH 30V 14.1A 6-Pin uDFN2020 T/R - Tape and Reel (Alt: DMT3006LFDFQ-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 18000 Factory Stock |
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$0.1313 / $0.1551 | Buy Now |
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DISTI #
621-DMT3006LFDFQ-7
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Mouser Electronics | MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K RoHS: Compliant | 0 |
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$0.1320 / $0.4900 | Order Now |
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Future Electronics | MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.1340 / $0.1450 | Buy Now |
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DISTI #
DMT3006LFDFQ-7
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TME | Transistor: N-MOSFET, unipolar, 30V, 12.5A, Idm: 80A, 2.1W Min Qty: 3 | 0 |
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$0.1980 / $0.2830 | RFQ |
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DISTI #
DMT3006LFDFQ-7
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Avnet Silica | Transistor MOSFET N-CH 30V 14.1A 6-Pin uDFN2020 T/R (Alt: DMT3006LFDFQ-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days | Silica - 3000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
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$0.2401 | Buy Now |
Part Details for DMT3006LFDFQ-7
DMT3006LFDFQ-7 CAD Models
DMT3006LFDFQ-7 Part Data Attributes
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DMT3006LFDFQ-7
Diodes Incorporated
Buy Now
Datasheet
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DMT3006LFDFQ-7
Diodes Incorporated
Power Field-Effect Transistor, 14.1A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, U-DFN2020-6, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | U-DFN2020-6, 6 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 31 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 14.1 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 72 pF | |
| JESD-30 Code | S-PDSO-N6 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | AEC-Q101; IATF 16949; MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |