Datasheets
DMT3004LPS-13 by: Diodes Incorporated

Power Field-Effect Transistor,

Part Details for DMT3004LPS-13 by Diodes Incorporated

Overview of DMT3004LPS-13 by Diodes Incorporated

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Price & Stock for DMT3004LPS-13

Part # Distributor Description Stock Price Buy
DISTI # DMT3004LPS-13DICT-ND
DigiKey MOSFET N-CH 30V 21A PWRDI5060 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2500
In Stock
  • 1 $0.9200
  • 10 $0.7500
  • 100 $0.5835
  • 500 $0.4946
  • 1,000 $0.4029
  • 2,500 $0.3793
  • 5,000 $0.3612
  • 12,500 $0.3445
  • 25,000 $0.3439
$0.3439 / $0.9200 Buy Now
DISTI # DMT3004LPS-13
Avnet Americas MOSFET BVDSS: 31V~40V POWERDI5060-8 T&R 2.5K - Tape and Reel (Alt: DMT3004LPS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4030
  • 5,000 $0.3886
  • 10,000 $0.3769
  • 15,000 $0.3659
  • 20,000 $0.3521
  • 25,000 $0.3466
  • 250,000 $0.3411
$0.3411 / $0.4030 Buy Now
DISTI # 621-DMT3004LPS-13
Mouser Electronics MOSFET 30V N-Ch Enh FET RoHS: Compliant 0
  • 1 $0.9200
  • 10 $0.7500
  • 100 $0.5840
  • 500 $0.4950
  • 1,000 $0.4030
  • 2,500 $0.3790
  • 5,000 $0.3610
  • 10,000 $0.3440
$0.3440 / $0.9200 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 0
  • 2,500 $0.3620
$0.3620 Buy Now
DISTI # DMT3004LPS-13
Avnet Silica MOSFET BVDSS: 31V~40V POWERDI5060-8 T&R 2.5K (Alt: DMT3004LPS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Silica - 2500
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $0.5937
$0.5937 Buy Now

Part Details for DMT3004LPS-13

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DMT3004LPS-13 Part Data Attributes:

DMT3004LPS-13 Diodes Incorporated
Buy Now Datasheet
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DMT3004LPS-13 Diodes Incorporated Power Field-Effect Transistor,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Avalanche Energy Rating (Eas) 110 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 140 A
Drain-source On Resistance-Max 0.0038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 240 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 113 W
Pulsed Drain Current-Max (IDM) 180 A
Reference Standard MIL-STD-202
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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