Datasheets
DMT3003LFGQ-13 by:

Power Field-Effect Transistor,

Part Details for DMT3003LFGQ-13 by Diodes Incorporated

Overview of DMT3003LFGQ-13 by Diodes Incorporated

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for DMT3003LFGQ-13

Part # Distributor Description Stock Price Buy
DISTI # DMT3003LFGQ-13DI-ND
DigiKey MOSFET N-CH 30V 22A PWRDI3333 Min Qty: 3000 Lead time: 8 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 3,000 $0.3604
  • 6,000 $0.3432
  • 9,000 $0.3274
  • 30,000 $0.3267
$0.3267 / $0.3604 Buy Now
DISTI # DMT3003LFGQ-13
Avnet Americas MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K - Tape and Reel (Alt: DMT3003LFGQ-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 195000 Factory Stock
  • 3,000 $0.3830
  • 6,000 $0.3692
  • 12,000 $0.3581
  • 18,000 $0.3477
  • 24,000 $0.3346
  • 30,000 $0.3294
  • 300,000 $0.3241
$0.3241 / $0.3830 Buy Now
DISTI # 621-DMT3003LFGQ-13
Mouser Electronics MOSFET MOSFET BVDSS 25V-30V RoHS: Compliant 0
  • 3,000 $0.3600
  • 6,000 $0.3430
  • 9,000 $0.3270
  • 24,000 $0.3260
$0.3260 / $0.3600 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks 0
  • 3,000 $0.3440
$0.3440 Buy Now

Part Details for DMT3003LFGQ-13

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DMT3003LFGQ-13 Part Data Attributes

DMT3003LFGQ-13 Diodes Incorporated
Buy Now Datasheet
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DMT3003LFGQ-13 Diodes Incorporated Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 240 pF
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 62 W
Pulsed Drain Current-Max (IDM) 100 A
Reference Standard AEC-Q101; MIL-STD-202
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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