Datasheets
DMT2004UFV-13 by: Diodes Incorporated

Power Field-Effect Transistor,

Part Details for DMT2004UFV-13 by Diodes Incorporated

Results Overview of DMT2004UFV-13 by Diodes Incorporated

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

DMT2004UFV-13 Information

DMT2004UFV-13 by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for DMT2004UFV-13

Part # Distributor Description Stock Price Buy
DISTI # DMT2004UFV-13-ND
DigiKey MOSFET N-CH 24V 70A POWERDI3333 Min Qty: 3000 Lead time: 24 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 3,000 $0.2137
  • 6,000 $0.1966
  • 9,000 $0.1879
  • 15,000 $0.1781
  • 21,000 $0.1761
$0.1761 / $0.2137 Buy Now
DISTI # DMT2004UFV-13
Avnet Americas MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 3K - Tape and Reel (Alt: DMT2004UFV-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1448
  • 6,000 $0.1420
  • 12,000 $0.1398
  • 18,000 $0.1375
  • 24,000 $0.1352
$0.1352 / $0.1448 Buy Now
DISTI # 621-DMT2004UFV-13
Mouser Electronics MOSFETs MOSFET BVDSS: 8V-24V RoHS: Compliant 0
  • 1 $0.6200
  • 10 $0.5340
  • 100 $0.3990
  • 500 $0.3140
  • 1,000 $0.2420
  • 3,000 $0.1880
  • 9,000 $0.1760
$0.1760 / $0.6200 Order Now

Part Details for DMT2004UFV-13

DMT2004UFV-13 CAD Models

DMT2004UFV-13 Part Data Attributes

DMT2004UFV-13 Diodes Incorporated
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DMT2004UFV-13 Diodes Incorporated Power Field-Effect Transistor,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 24 Weeks
Samacsys Manufacturer Diodes Incorporated
Avalanche Energy Rating (Eas) 36 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 24 V
Drain Current-Max (ID) 70 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 559 pF
JESD-30 Code S-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.3 W
Pulsed Drain Current-Max (IDM) 90 A
Reference Standard MIL-STD-202
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON