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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
DMT2004UFV-13 by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMT2004UFV-13-ND
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DigiKey | MOSFET N-CH 24V 70A POWERDI3333 Min Qty: 3000 Lead time: 24 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.1761 / $0.2137 | Buy Now |
DISTI #
DMT2004UFV-13
|
Avnet Americas | MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 3K - Tape and Reel (Alt: DMT2004UFV-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
|
$0.1352 / $0.1448 | Buy Now |
DISTI #
621-DMT2004UFV-13
|
Mouser Electronics | MOSFETs MOSFET BVDSS: 8V-24V RoHS: Compliant | 0 |
|
$0.1760 / $0.6200 | Order Now |
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DMT2004UFV-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMT2004UFV-13
Diodes Incorporated
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 24 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Avalanche Energy Rating (Eas) | 36 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 24 V | |
Drain Current-Max (ID) | 70 A | |
Drain-source On Resistance-Max | 0.01 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 559 pF | |
JESD-30 Code | S-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.3 W | |
Pulsed Drain Current-Max (IDM) | 90 A | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |