Datasheets
DMT15H017SK3-13 by: Diodes Incorporated

Power Field-Effect Transistor,

Part Details for DMT15H017SK3-13 by Diodes Incorporated

Results Overview of DMT15H017SK3-13 by Diodes Incorporated

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Applications Space Technology Aerospace and Defense Automotive

DMT15H017SK3-13 Information

DMT15H017SK3-13 by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for DMT15H017SK3-13

Part # Distributor Description Stock Price Buy
DISTI # 31-DMT15H017SK3-13TR-ND
DigiKey MOSFET BVDSS: 101V~250V TO252 T& Min Qty: 2500 Lead time: 12 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 2,500 $0.6776
  • 5,000 $0.6707
$0.6707 / $0.6776 Buy Now
DISTI # DMT15H017SK3-13
Avnet Americas - Tape and Reel (Alt: DMT15H017SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.6895
  • 5,000 $0.6761
  • 10,000 $0.6654
  • 15,000 $0.6546
  • 20,000 $0.6439
$0.6439 / $0.6895 Buy Now
DISTI # 621-DMT15H017SK3-13
Mouser Electronics MOSFETs MOSFET BVDSS: 101V-250V TO252 T&R 2.5K RoHS: Compliant 0
  • 2,500 $0.6770
  • 5,000 $0.6700
$0.6700 / $0.6770 Order Now
Future Electronics   RoHS: Not Compliant pbFree: No Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks 0
  • 2,500 $0.6880
$0.6880 Buy Now
DISTI # DMT15H017SK3-13
Avnet Silica (Alt: DMT15H017SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks, 0 Days Silica - 2500
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $1.2400
$1.2400 Buy Now

Part Details for DMT15H017SK3-13

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DMT15H017SK3-13 Part Data Attributes

DMT15H017SK3-13 Diodes Incorporated
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DMT15H017SK3-13 Diodes Incorporated Power Field-Effect Transistor,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Date Of Intro 2020-07-16
Samacsys Manufacturer Diodes Incorporated
Avalanche Energy Rating (Eas) 311 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 68 A
Drain-source On Resistance-Max 0.0185 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.9 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.2 W
Pulsed Drain Current-Max (IDM) 272 A
Reference Standard MIL-STD-202
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

DMT15H017SK3-13 Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the DMT15H017SK3-13 is -55°C to 150°C.

  • To ensure reliability, follow the recommended derating guidelines, use a suitable thermal management system, and consider the device's thermal resistance (RθJA) when designing the application.

  • The maximum allowable power dissipation for the DMT15H017SK3-13 is 1.5W. However, this value may vary depending on the operating temperature and other factors.

  • Yes, the DMT15H017SK3-13 is suitable for switching regulator applications due to its low RDS(on) and high switching speed. However, ensure that the device is properly driven and the application is designed to minimize switching losses.

  • To protect the DMT15H017SK3-13 from ESD, follow proper handling and storage procedures, use ESD-safe equipment and materials, and consider adding ESD protection circuits in the application.