Part Details for DMT10H072LFV-7 by Diodes Incorporated
Overview of DMT10H072LFV-7 by Diodes Incorporated
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for DMT10H072LFV-7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK8860
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Newark | Mosfet, N-Ch, 100V, 20A, Powerdi 3333 Rohs Compliant: Yes |Diodes Inc. DMT10H072LFV-7 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2386 |
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$0.1940 / $0.5200 | Buy Now |
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DISTI #
31-DMT10H072LFV-7CT-ND
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DigiKey | MOSFET N-CH 100V PWRDI3333 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3349 In Stock |
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$0.1405 / $0.4800 | Buy Now |
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DISTI #
DMT10H072LFV-7
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Avnet Americas | Trans MOSFET N-CH 100V 20A 8-Pin PowerDI T/R - Tape and Reel (Alt: DMT10H072LFV-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks, 0 Days Container: Reel | 300000 Factory Stock |
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$0.1394 / $0.1647 | Buy Now |
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DISTI #
621-DMT10H072LFV-7
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Mouser Electronics | MOSFET MOSFET BVDSS 61V-100V RoHS: Compliant | 4790 |
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$0.1400 / $0.5000 | Buy Now |
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DISTI #
V36:1790_23149539
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Arrow Electronics | Trans MOSFET N-CH 100V 4.7A 8-Pin PowerDI EP T/R RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks Date Code: 2223 | Americas - 2000 |
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$0.1344 / $0.1422 | Buy Now |
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Future Electronics | 100V, 20A, 62mohm, N-Channel, POWERDI3333-8 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks Container: Reel | 2000Reel |
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$0.1390 / $0.1520 | Buy Now |
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Future Electronics | 100V, 20A, 62mohm, N-Channel, POWERDI3333-8 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.1390 / $0.1520 | Buy Now |
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Future Electronics | 100V, 20A, 62mohm, N-Channel, POWERDI3333-8 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 2000 Lead time: 8 Weeks Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.1320 / $0.1780 | Buy Now |
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DISTI #
DMT10H072LFV-7
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TME | Transistor: N-MOSFET, unipolar, 100V, 3.7A, Idm: 80A, 2W Min Qty: 1 | 0 |
|
$0.3020 / $0.7640 | RFQ |
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DISTI #
DMT10H072LFV-7
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Avnet Silica | Trans MOSFET N-CH 100V 20A 8-Pin PowerDI T/R (Alt: DMT10H072LFV-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMT10H072LFV-7
DMT10H072LFV-7 CAD Models
DMT10H072LFV-7 Part Data Attributes
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DMT10H072LFV-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMT10H072LFV-7
Diodes Incorporated
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Date Of Intro | 2019-01-16 | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 1.8 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.062 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2.5 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 37.8 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |