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Power Field-Effect Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
15AC8188
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Newark | Mosfet, Aec-Q101, Dual Pch, Powerdi5060-8 Rohs Compliant: Yes |Diodes Inc. DMPH6050SPD-13 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3591 |
|
$0.6130 / $1.1800 | Buy Now |
DISTI #
31-DMPH6050SPD-13CT-ND
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DigiKey | MOSFET 2P-CH 26A POWERDI5060-8 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2247 In Stock |
|
$0.3997 / $1.2700 | Buy Now |
DISTI #
DMPH6050SPD-13
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Avnet Americas | Transistor MOSFET Array Dual P-CH 60V 26A 8-Pin PowerDI 5060 T/R - Tape and Reel (Alt: DMPH6050SPD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 25000 Factory Stock |
|
$0.3762 / $0.3853 | Buy Now |
DISTI #
621-DMPH6050SPD-13
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Mouser Electronics | MOSFETs MOSFET BVDSS: 41V-60V RoHS: Compliant | 27572 |
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$0.3990 / $1.0300 | Buy Now |
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Future Electronics | DMPH6050SPD SERIES 26A SURFACE MOUNT MOSFET ARRAY POWERDI5060-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
|
$0.4200 / $0.4400 | Buy Now |
DISTI #
DMPH6050SPD-13
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Avnet Silica | Transistor MOSFET Array Dual P-CH 60V 26A 8-Pin PowerDI 5060 T/R (Alt: DMPH6050SPD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 2500 |
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Buy Now | |
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LCSC | 60V 26A 48m10V5A 2.8W 3V250uA 1 Piece P-Channel PowerDI-8(5x6) MOSFETs ROHS | 1 |
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$1.6066 / $2.6023 | Buy Now |
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New Advantage Corporation | MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 2500 |
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$0.7391 | Buy Now |
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DMPH6050SPD-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMPH6050SPD-13
Diodes Incorporated
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Avalanche Energy Rating (Eas) | 30 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 26 A | |
Drain-source On Resistance-Max | 0.048 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 70 pF | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.8 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |