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Small Signal Field-Effect Transistor, 4A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK8788
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Newark | Mosfet, Dual, P-Ch, 40V, 4A Rohs Compliant: Yes |Diodes Inc. DMP4050SSDQ-13 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2500 |
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$0.7310 / $1.5300 | Buy Now |
DISTI #
31-DMP4050SSDQ-13CT-ND
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DigiKey | MOSFET 2P-CH 40V 4A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1247 In Stock |
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$0.5250 / $1.5600 | Buy Now |
DISTI #
DMP4050SSDQ-13
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Avnet Americas | Transistor MOSFET Array Dual P-CH 40V 5.2A 8-Pin SOIC T/R - Tape and Reel (Alt: DMP4050SSDQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 15000 Factory Stock |
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$0.4004 | Buy Now |
DISTI #
621-DMP4050SSDQ-13
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Mouser Electronics | MOSFETs 40V P-Ch Dual FET 20Vgs -4.2A 14.3 RoHS: Compliant | 9622 |
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$0.5250 / $1.3600 | Buy Now |
DISTI #
DMP4050SSDQ-13
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TME | Transistor: P-MOSFET x2, unipolar, -40V, -4.1A, 1.25W, SO8 Min Qty: 1 | 0 |
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$0.4870 / $1.1660 | RFQ |
DISTI #
DMP4050SSDQ-13
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Avnet Silica | Transistor MOSFET Array Dual P-CH 40V 5.2A 8-Pin SOIC T/R (Alt: DMP4050SSDQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 2500 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 2500 |
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$0.7267 | Buy Now |
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DMP4050SSDQ-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMP4050SSDQ-13
Diodes Incorporated
Small Signal Field-Effect Transistor, 4A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.14 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |