Datasheets
DMP3035LSS-13 by:

Power Field-Effect Transistor, 12A I(D), 30V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for DMP3035LSS-13 by Diodes Incorporated

Overview of DMP3035LSS-13 by Diodes Incorporated

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Applications Education and Research Aerospace and Defense Agriculture Technology Robotics and Drones

Price & Stock for DMP3035LSS-13

Part # Distributor Description Stock Price Buy
DISTI # DMP3035LSS-13-ND
DigiKey MOSFET P-CH 30V 11A 8SOP Min Qty: 2500 Lead time: 24 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 2,500 $0.2021
  • 5,000 $0.1872
  • 7,500 $0.1795
  • 12,500 $0.1787
$0.1787 / $0.2021 Buy Now
DISTI # DMP3035LSS-13
Avnet Americas Trans MOSFET P-CH 30V 11A 8-Pin SOP T/R - Tape and Reel (Alt: DMP3035LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days Container: Reel 120000 Factory Stock
  • 2,500 $0.1961
$0.1961 Buy Now
Bristol Electronics   1829
RFQ
Quest Components   1463
  • 1 $0.7335
  • 137 $0.3668
  • 546 $0.2934
$0.2934 / $0.7335 Buy Now
DISTI # DMP3035LSS-13
TME Transistor: P-MOSFET, unipolar, -30V, -8A, Idm: -80A, 2W, SO8 Min Qty: 1 0
  • 1 $0.7710
  • 5 $0.3370
  • 25 $0.3030
  • 100 $0.2680
  • 500 $0.2400
$0.2400 / $0.7710 RFQ
Win Source Electronics MOSFET P-CH 30V 12A 8-SOIC 28200
  • 180 $0.2845
  • 430 $0.2335
  • 665 $0.2262
  • 915 $0.2189
  • 1,185 $0.2116
  • 1,585 $0.1897
$0.1897 / $0.2845 Buy Now

Part Details for DMP3035LSS-13

DMP3035LSS-13 CAD Models

DMP3035LSS-13 Part Data Attributes

DMP3035LSS-13 Diodes Incorporated
Buy Now Datasheet
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DMP3035LSS-13 Diodes Incorporated Power Field-Effect Transistor, 12A I(D), 30V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer DIODES INC
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 24 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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