Part Details for DMP1011LFV-13 by Diodes Incorporated
Overview of DMP1011LFV-13 by Diodes Incorporated
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMP1011LFV-13
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMP1011LFV-13-ND
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DigiKey | MOSFET P-CH 12V 19A POWERDI3333 Min Qty: 3000 Lead time: 8 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2380 / $0.2766 | Buy Now |
DISTI #
DMP1011LFV-13
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Avnet Americas | MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 3K - Tape and Reel (Alt: DMP1011LFV-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 24000 Factory Stock |
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$0.2076 | Buy Now |
DISTI #
621-DMP1011LFV-13
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Mouser Electronics | MOSFETs MOSFETBVDSS: 8V-24V RoHS: Compliant | 0 |
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$0.2720 | Order Now |
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Future Electronics | MOSFET P-CH 12V 19A POWERDI3333 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.2200 / $0.2350 | Buy Now |
DISTI #
DMP1011LFV-13
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Avnet Silica | MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 3K (Alt: DMP1011LFV-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 3000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
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$0.3704 | Buy Now |
Part Details for DMP1011LFV-13
DMP1011LFV-13 CAD Models
DMP1011LFV-13 Part Data Attributes
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DMP1011LFV-13
Diodes Incorporated
Buy Now
Datasheet
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DMP1011LFV-13
Diodes Incorporated
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | ESD PROTECTED | |
Avalanche Energy Rating (Eas) | 86 mJ | |
Case Connection | SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.0117 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.16 W | |
Pulsed Drain Current-Max (IDM) | 70 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |