Part Details for DMNH4005SCT by Diodes Incorporated
Overview of DMNH4005SCT by Diodes Incorporated
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMNH4005SCT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
DMNH4005SCT-ND
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DigiKey | MOSFET N-CH 40V 150A TO220AB Min Qty: 1 Lead time: 8 Weeks Container: Tube |
40 In Stock |
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$0.9902 / $2.5400 | Buy Now |
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DISTI #
DMNH4005SCT
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Avnet Americas | Transistor MOSFET N-CH 40V 150A 3-Pin TO-220AB Tube - Rail/Tube (Alt: DMNH4005SCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 8 Weeks, 0 Days Container: Tube | 3300 Factory Stock |
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$1.4201 | Buy Now |
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DISTI #
621-DMNH4005SCT
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Mouser Electronics | MOSFETs MOSFET BVDSS: 41V-60V RoHS: Compliant | 57 |
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$1.1400 / $2.4400 | Buy Now |
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Future Electronics | DMH400 SERIES N-Channel 40V 150A 165W Through Hole mosfet- TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 8 Weeks Container: Tube | 0Tube |
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$1.0300 / $1.1400 | Buy Now |
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DISTI #
DMNH4005SCT
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Avnet Silica | Transistor MOSFET N-CH 40V 150A 3-Pin TO-220AB Tube (Alt: DMNH4005SCT) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days | Silica - 50 |
|
Buy Now | |
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LCSC | 40V 150A 165W 4m 3V250uA 1 N-Channel TO-220AB MOSFETs ROHS | 19 |
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$1.6883 / $1.7841 | Buy Now |
Part Details for DMNH4005SCT
DMNH4005SCT CAD Models
DMNH4005SCT Part Data Attributes
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DMNH4005SCT
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMNH4005SCT
Diodes Incorporated
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 150 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 242 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 165 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |