Datasheets
DMN63D1L-13 by: Diodes Incorporated

Small Signal Field-Effect Transistor,

Part Details for DMN63D1L-13 by Diodes Incorporated

Overview of DMN63D1L-13 by Diodes Incorporated

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Price & Stock for DMN63D1L-13

Part # Distributor Description Stock Price Buy
DISTI # 31-DMN63D1L-13CT-ND
DigiKey MOSFET N-CH 60V 380MA SOT23 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 9896
In Stock
  • 1 $0.2700
  • 10 $0.1820
  • 100 $0.0889
  • 500 $0.0741
  • 1,000 $0.0515
  • 2,000 $0.0446
  • 5,000 $0.0414
  • 10,000 $0.0343
  • 30,000 $0.0337
  • 50,000 $0.0303
  • 100,000 $0.0269
  • 250,000 $0.0263
$0.0263 / $0.2700 Buy Now
DISTI # DMN63D1L-13
Avnet Americas MOSFET BVDSS: 41V~60V SOT23 T&R 10K - Tape and Reel (Alt: DMN63D1L-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks, 0 Days Container: Reel 130000 Factory Stock
  • 10,000 $0.0239
  • 20,000 $0.0230
  • 40,000 $0.0223
  • 60,000 $0.0217
  • 80,000 $0.0209
  • 100,000 $0.0205
  • 1,000,000 $0.0202
$0.0202 / $0.0239 Buy Now
DISTI # 621-DMN63D1L-13
Mouser Electronics MOSFET MOSFET BVDSS RoHS: Compliant 0
  • 1 $0.2700
  • 10 $0.1820
  • 100 $0.1160
  • 1,000 $0.0520
  • 2,500 $0.0450
  • 10,000 $0.0320
  • 50,000 $0.0300
  • 100,000 $0.0290
$0.0290 / $0.2700 Order Now
DISTI # DMN63D1L-13
Avnet Asia MOSFET BVDSS: 41V~60V SOT23 T&R 10K (Alt: DMN63D1L-13) RoHS: Compliant Min Qty: 20000 Package Multiple: 10000 Lead time: 12 Weeks, 0 Days 0
RFQ
LCSC 60V 2 SOT-23 MOSFETs ROHS 150
  • 5 $0.0472
  • 50 $0.0460
  • 150 $0.0453
  • 500 $0.0445
$0.0445 / $0.0472 Buy Now

Part Details for DMN63D1L-13

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DMN63D1L-13 Part Data Attributes:

DMN63D1L-13 Diodes Incorporated
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DMN63D1L-13 Diodes Incorporated Small Signal Field-Effect Transistor,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Additional Feature ESD PROTECTED, HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.38 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.56 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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