Part Details for DMN6070SY-13 by Diodes Incorporated
Overview of DMN6070SY-13 by Diodes Incorporated
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for DMN6070SY-13
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
28AK8625
|
Newark | Mosfet, N-Ch, 60V, 4.1A, Sot-89 Rohs Compliant: Yes |Diodes Inc. DMN6070SY-13 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 930 |
|
$0.1370 / $0.4680 | Buy Now |
|
DISTI #
31-DMN6070SY-13CT-ND
|
DigiKey | MOSFET N-CH 60V 4.1A SOT89-3 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1634 In Stock |
|
$0.0985 / $0.4300 | Buy Now |
|
DISTI #
DMN6070SY-13
|
Avnet Americas | Transistor MOSFET N-CH 60V 4.1A 3-Pin SOT-89 T/R - Tape and Reel (Alt: DMN6070SY-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.0806 | Buy Now |
|
DISTI #
621-DMN6070SY-13
|
Mouser Electronics | MOSFETs MOSFET BVDSS: 41V-60V | 14050 |
|
$0.1130 / $0.4300 | Buy Now |
|
|
Future Electronics | 60V, 4.1A, 85mOhm, N-Channel, SOT89 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
|
$0.0791 / $0.0894 | Buy Now |
|
|
Future Electronics | 60V, 4.1A, 85mOhm, N-Channel, SOT89 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
|
$0.0791 / $0.0894 | Buy Now |
|
DISTI #
DMN6070SY-13
|
TME | Transistor: N-MOSFET, unipolar, 60V, 3.3A, Idm: 15A, 2.1W, SOT89 Min Qty: 1 | 0 |
|
$0.1230 / $0.3430 | RFQ |
|
DISTI #
DMN6070SY-13
|
Avnet Asia | Transistor MOSFET N-CH 60V 4.1A 3-Pin SOT-89 T/R (Alt: DMN6070SY-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days | 0 |
|
$0.0741 / $0.0829 | Buy Now |
|
DISTI #
DMN6070SY-13
|
Avnet Silica | Transistor MOSFET N-CH 60V 4.1A 3-Pin SOT-89 T/R (Alt: DMN6070SY-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
|
Chip-Germany GmbH | RoHS: Not Compliant | 2240 |
|
RFQ |
Part Details for DMN6070SY-13
DMN6070SY-13 CAD Models
DMN6070SY-13 Part Data Attributes
|
|
DMN6070SY-13
Diodes Incorporated
Buy Now
Datasheet
|
Compare Parts:
DMN6070SY-13
Diodes Incorporated
Small Signal Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SOT-89, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 6 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 4.1 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 20 pF | |
| JESD-30 Code | R-PSSO-F3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |