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Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07AH3783
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Newark | Mosfet, N-Ch, 60V, 4.1A, Sot223, Transistor Polarity:N Channel, Continuous Drain Current Id:4.1A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.068Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipationrohs Compliant: Yes |Diodes Inc. DMN6068SE-13 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 9142 |
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$0.2450 / $0.6560 | Buy Now |
DISTI #
86AK4783
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Newark | Mosfet, N-Ch, 60V, 4.1A, Sot-223 Rohs Compliant: Yes |Diodes Inc. DMN6068SE-13 Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.2170 / $0.2410 | Buy Now |
DISTI #
DMN6068SE-13CT-ND
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DigiKey | MOSFET N-CH 60V 4.1A SOT223 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-ReelĀ®, Tape & Reel (TR) |
6561 In Stock |
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$0.1751 / $0.6000 | Buy Now |
DISTI #
DMN6068SE-13
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Avnet Americas | Power MOSFET, N Channel, 60 V, 5.6 A, 68 Milliohms, SOT-223, 3 Pins, Surface Mount - Rail/Tube (Alt: DMN6068SE-13) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks, 0 Days Container: Tube | 0 |
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$0.1432 / $0.1692 | Buy Now |
DISTI #
522-DMN6068SE-13
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Mouser Electronics | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | 1086 |
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$0.1950 / $0.6000 | Buy Now |
DISTI #
70438101
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RS | MOSFET N-Channel 60V 5.6A SOT223 | Diodes Inc DMN6068SE-13 RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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$0.4510 | RFQ |
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Future Electronics | N-Channel 60 V 68 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223-3 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.1720 / $0.1830 | Buy Now |
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Future Electronics | N-Channel 60 V 68 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223-3 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.1720 / $0.1830 | Buy Now |
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Future Electronics | N-Channel 60 V 68 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223-3 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.1720 / $0.2300 | Buy Now |
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Bristol Electronics | 1466 |
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RFQ |
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DMN6068SE-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN6068SE-13
Diodes Incorporated
Power Field-Effect Transistor, 4.1A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, GREEN, PLASTIC PACKAGE-4
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Part Package Code | TO-261AA | |
Package Description | GREEN, PLASTIC PACKAGE-4 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 37.5 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 4.1 A | |
Drain-source On Resistance-Max | 0.068 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.7 W | |
Pulsed Drain Current-Max (IDM) | 20.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for DMN6068SE-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMN6068SE-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLL024NPBF | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-4 | Infineon Technologies AG | DMN6068SE-13 vs IRLL024NPBF |
AUIRLL024N | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | International Rectifier | DMN6068SE-13 vs AUIRLL024N |
IRLL024N | Power Field-Effect Transistor, 4.4A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 3 PIN | Infineon Technologies AG | DMN6068SE-13 vs IRLL024N |
AUIRLL024NTR | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 | Infineon Technologies AG | DMN6068SE-13 vs AUIRLL024NTR |