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Transistors / Power Field-Effect Transistors / DMN6017SK3-13
Datasheets
DMN6017SK3-13 by: Diodes Incorporated

Power Field-Effect Transistor, 11A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2

Part Details for DMN6017SK3-13 by Diodes Incorporated

Overview of DMN6017SK3-13 by Diodes Incorporated

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Price & Stock for DMN6017SK3-13

Part # Distributor Description Stock Price Buy
DISTI # 32AK9133
Newark Mosfet, N-Ch, 60V, 43A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN6017SK3-13 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2358
  • 1 $0.6360
  • 10 $0.5560
  • 25 $0.5040
  • 50 $0.4510
  • 100 $0.3990
  • 250 $0.3700
  • 500 $0.3400
  • 1,000 $0.2960
$0.2960 / $0.6360 Buy Now
DISTI # 31-DMN6017SK3-13CT-ND
DigiKey MOSFET N-CHANNEL 60V 43A TO252 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) Temporarily Out of Stock
  • 1 $0.9200
  • 10 $0.5760
  • 100 $0.3753
  • 500 $0.2887
  • 1,000 $0.2607
  • 2,500 $0.2305
  • 5,000 $0.2118
  • 7,500 $0.2023
  • 12,500 $0.1916
  • 17,500 $0.1876
$0.1876 / $0.9200 Buy Now
DISTI # DMN6017SK3-13
Avnet Americas Trans MOSFET N-CH 60V 43A 3-Pin TO-252 T/R - Tape and Reel (Alt: DMN6017SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.1911
$0.1911 Buy Now
DISTI # 621-DMN6017SK3-13
Mouser Electronics MOSFETs MOSFETBVDSS: 41V-60V RoHS: Compliant 3531
  • 1 $0.7100
  • 10 $0.4760
  • 100 $0.3270
  • 500 $0.2580
  • 1,000 $0.2360
  • 2,500 $0.2150
$0.2150 / $0.7100 Buy Now
Future Electronics MOSFET BVDSS 41V60V TO252 TR 2.5K RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel 0
Reel
  • 2,500 $0.1970
  • 5,000 $0.1930
  • 7,500 $0.1910
  • 10,000 $0.1890
  • 12,500 $0.1840
$0.1840 / $0.1970 Buy Now
Future Electronics MOSFET BVDSS 41V60V TO252 TR 2.5K RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel 0
Reel
  • 2,500 $0.1990
  • 5,000 $0.1950
  • 7,500 $0.1930
  • 12,500 $0.1900
  • 25,000 $0.1840
$0.1840 / $0.1990 Buy Now
DISTI # DMN6017SK3-13
Avnet Asia Trans MOSFET N-CH 60V 43A 3-Pin TO-252 T/R (Alt: DMN6017SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days 0
  • 2,500 $0.1579
  • 5,000 $0.1559
  • 7,500 $0.1539
  • 12,500 $0.1519
  • 25,000 $0.1482
  • 62,500 $0.1446
  • 125,000 $0.1412
$0.1412 / $0.1579 Buy Now
DISTI # DMN6017SK3-13
Avnet Silica Trans MOSFET N-CH 60V 43A 3-Pin TO-252 T/R (Alt: DMN6017SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
LCSC 60V 43A 18m6A10V 50W 3V250uA 1 N-Channel TO-252(DPAK) MOSFETs ROHS 20
  • 1 $0.3017
  • 10 $0.2939
  • 30 $0.2892
  • 100 $0.2845
$0.2845 / $0.3017 Buy Now

Part Details for DMN6017SK3-13

DMN6017SK3-13 CAD Models

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DMN6017SK3-13 Part Data Attributes

Parametric Data
DMN6017SK3-13 Diodes Incorporated
Buy Now Datasheet
Compare Parts:
DMN6017SK3-13 Diodes Incorporated Power Field-Effect Transistor, 11A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Date Of Intro 2017-06-19
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 32 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 70 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for DMN6017SK3-13

This table gives cross-reference parts and alternative options found for DMN6017SK3-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMN6017SK3-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSZ100N06LS3GATMA1 Power Field-Effect Transistor, 11A I(D), 60V, 0.0179ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG DMN6017SK3-13 vs BSZ100N06LS3GATMA1
NVD5484NLT4G Power MOSFET 60V, 54A, 17 mOhm, Single N-Channel, DPAK, Logic Level., DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL, Automotive Qualified onsemi DMN6017SK3-13 vs NVD5484NLT4G

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