Datasheets
DMN4800LSSQ-13 by:

Small Signal Field-Effect Transistor,

Part Details for DMN4800LSSQ-13 by Diodes Incorporated

Overview of DMN4800LSSQ-13 by Diodes Incorporated

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Price & Stock for DMN4800LSSQ-13

Part # Distributor Description Stock Price Buy
DISTI # 28AK8593
Newark Mosfet, N-Ch, 30V, 8.6A, Soic Rohs Compliant: Yes |Diodes Inc. DMN4800LSSQ-13 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2500
  • 1 $0.5510
  • 10 $0.4740
  • 25 $0.4260
  • 50 $0.3790
  • 100 $0.3310
  • 250 $0.2940
  • 500 $0.2580
  • 1,000 $0.2100
$0.2100 / $0.5510 Buy Now
DISTI # DMN4800LSSQ-13DICT-ND
DigiKey MOSFET N-CH 30V 8.6A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4524
In Stock
  • 1 $0.5300
  • 10 $0.4560
  • 100 $0.3172
  • 500 $0.2477
  • 1,000 $0.2013
  • 2,500 $0.1800
  • 5,000 $0.1708
  • 12,500 $0.1586
  • 25,000 $0.1550
  • 62,500 $0.1510
$0.1510 / $0.5300 Buy Now
DISTI # DMN4800LSSQ-13
Avnet Americas Trans MOSFET N-CH 30V 8.6A 6-Pin SOIC T/R - Tape and Reel (Alt: DMN4800LSSQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 70000 Factory Stock
  • 2,500 $0.1462
  • 5,000 $0.1410
  • 10,000 $0.1367
  • 15,000 $0.1327
  • 20,000 $0.1277
  • 25,000 $0.1258
  • 250,000 $0.1237
$0.1237 / $0.1462 Buy Now
DISTI # 621-DMN4800LSSQ-13
Mouser Electronics MOSFET 30V N-Ch Enh FET 25Vgs 9A 16mOhm 1.6V RoHS: Compliant 2926
  • 1 $0.5300
  • 10 $0.4560
  • 100 $0.3180
  • 500 $0.2480
  • 1,000 $0.2020
  • 2,500 $0.1730
$0.1730 / $0.5300 Buy Now
Future Electronics 30V, 8.6A, 0.014 ohms, SO-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel 0
Reel
  • 2,500 $0.1650
  • 5,000 $0.1620
  • 10,000 $0.1590
  • 12,500 $0.1580
  • 37,500 $0.1520
$0.1520 / $0.1650 Buy Now
Future Electronics 30V, 8.6A, 0.014 ohms, SO-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel 0
Reel
  • 2,500 $0.1650
  • 5,000 $0.1620
  • 10,000 $0.1590
  • 12,500 $0.1580
  • 37,500 $0.1520
$0.1520 / $0.1650 Buy Now
DISTI # DMN4800LSSQ-13
TME Transistor: N-MOSFET, unipolar, 30V, 9A, Idm: 50A, 1W, SO8 Min Qty: 3 0
  • 3 $0.2590
  • 10 $0.2390
  • 30 $0.2110
  • 100 $0.1890
  • 500 $0.1770
$0.1770 / $0.2590 RFQ
DISTI # DMN4800LSSQ-13
Avnet Silica Trans MOSFET N-CH 30V 8.6A 6-Pin SOIC T/R (Alt: DMN4800LSSQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
New Advantage Corporation Small Signal Field-Effect Transistor RoHS: Compliant Min Qty: 1 Package Multiple: 10 65
  • 10 $0.4000
  • 50 $0.3600
$0.3600 / $0.4000 Buy Now

Part Details for DMN4800LSSQ-13

DMN4800LSSQ-13 CAD Models

DMN4800LSSQ-13 Part Data Attributes

DMN4800LSSQ-13 Diodes Incorporated
Buy Now Datasheet
Compare Parts:
DMN4800LSSQ-13 Diodes Incorporated Small Signal Field-Effect Transistor,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.6 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 122 pF
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.7 W
Pulsed Drain Current-Max (IDM) 50 A
Reference Standard AEC-Q101; MIL-STD-202
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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