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Power Field-Effect Transistor, 6.7A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK8592
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Newark | Mosfet, N-Ch, 30V, 8A, Soic Rohs Compliant: Yes |Diodes Inc. DMN4800LSSL-13 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4955 |
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$0.2030 / $0.4940 | Buy Now |
DISTI #
DMN4800LSSL-13DICT-ND
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DigiKey | MOSFET N-CH 30V 8A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2505 In Stock |
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$0.1313 / $0.5400 | Buy Now |
DISTI #
DMN4800LSSL-13
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Avnet Americas | Trans MOSFET N-CH 30V 8A 8-Pin SO T/R - Tape and Reel (Alt: DMN4800LSSL-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 7500 Factory Stock |
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$0.0948 / $0.1470 | Buy Now |
DISTI #
621-DMN4800LSSL-13
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Mouser Electronics | MOSFETs MOSFET BVDSS: 25V-30 SO-8,2.5K RoHS: Compliant | 2717 |
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$0.1580 / $0.4900 | Buy Now |
DISTI #
70550768
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RS | N-Channel Enhancement Mode MOSFET SOIC8 | Diodes Inc DMN4800LSSL-13 RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Container: Bulk | 0 |
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$0.3460 | RFQ |
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Future Electronics | Single N-Channel 30 V 20 mOhm 8.7 nC 1.46 W Silicon SMT Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.1290 / $0.1400 | Buy Now |
DISTI #
DMN4800LSSL-13
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TME | Transistor: N-MOSFET, unipolar, 30V, 5.3A, Idm: 50A, 1.46W, SO8 Min Qty: 1 | 0 |
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$0.1410 / $0.5120 | RFQ |
DISTI #
DMN4800LSSL-13
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Avnet Silica | Trans MOSFET N-CH 30V 8A 8-Pin SO T/R (Alt: DMN4800LSSL-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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LCSC | 30V 8A 1.46W 14m10V8A 1.6V250uA 1 N-Channel SO-8 MOSFETs ROHS | 2270 |
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$0.1339 / $0.2370 | Buy Now |
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DMN4800LSSL-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN4800LSSL-13
Diodes Incorporated
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Part Package Code | SOT | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6.7 A | |
Drain-source On Resistance-Max | 0.014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.46 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for DMN4800LSSL-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMN4800LSSL-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSZ130N03MSGATMA1 | Infineon Technologies AG | $0.2799 | Power Field-Effect Transistor, 9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | DMN4800LSSL-13 vs BSZ130N03MSGATMA1 |