DMN3053L-7
Diodes Incorporated
Description: Small Signal Field-Effect Transistor

Overview of DMN3053L-7 by Diodes Incorporated

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 10 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for DMN3053L-7 by Diodes Incorporated

Part # Manufacturer Description Stock Price Buy
DISTI # 28AK8559
Newark Mosfet, N-Ch, 30V, 4A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMN3053L-7 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1465
  • 1 $0.3950
  • 10 $0.3080
  • 25 $0.2620
  • 50 $0.2170
  • 100 $0.1720
  • 250 $0.1510
  • 500 $0.1310
  • 1,000 $0.1100
$0.1100 / $0.3950 Buy Now
DISTI # DMN3053L-7DICT-ND
DigiKey MOSFET N-CH 30V 4A SOT23 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 15041
In Stock
  • 1 $0.5200
  • 10 $0.3200
  • 100 $0.2034
  • 500 $0.1531
  • 1,000 $0.1243
  • 3,000 $0.1125
  • 6,000 $0.1056
  • 9,000 $0.1003
  • 15,000 $0.0943
  • 21,000 $0.0907
  • 30,000 $0.0873
  • 75,000 $0.0840
$0.0840 / $0.5200 Buy Now
DISTI # DMN3053L-7
Avnet Americas Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R - Tape and Reel (Alt: DMN3053L-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 99000 Factory Stock
  • 3,000 $0.0630
$0.0630 Buy Now
DISTI # 621-DMN3053L-7
Mouser Electronics MOSFETs 30V N-Ch Enh FET 12Vgss 0.76W 676pF RoHS: Compliant 7488
  • 1 $0.3800
  • 10 $0.2960
  • 100 $0.1650
  • 1,000 $0.1060
  • 3,000 $0.0980
  • 24,000 $0.0960
$0.0960 / $0.3800 Buy Now
Future Electronics N-Channel 30 V 45 mOhm 7.3 nC SMT Enhancement Mode Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 3,000 $0.0965
  • 9,000 $0.0928
  • 12,000 $0.0918
  • 30,000 $0.0888
  • 45,000 $0.0859
$0.0859 / $0.0965 Buy Now
Future Electronics N-Channel 30 V 45 mOhm 7.3 nC SMT Enhancement Mode Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 3,000 $0.0965
  • 9,000 $0.0928
  • 12,000 $0.0918
  • 30,000 $0.0888
  • 45,000 $0.0859
$0.0859 / $0.0965 Buy Now
DISTI # DMN3053L-7
TME Transistor: N-MOSFET, unipolar, 30V, 3.5A, 0.48W, SOT23, ESD Min Qty: 1 1128
  • 1 $0.3640
  • 10 $0.2970
  • 50 $0.2120
  • 100 $0.1800
  • 250 $0.1460
  • 500 $0.1260
  • 1,000 $0.1110
  • 3,000 $0.1080
$0.1080 / $0.3640 Buy Now
DISTI # DMN3053L-7
Avnet Silica Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R (Alt: DMN3053L-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 3000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.1205
$0.1205 Buy Now
Win Source Electronics MOSFET N-CH 30V 4A SOT23-3 241000
  • 95 $0.5320
  • 230 $0.4360
  • 355 $0.4230
  • 490 $0.4090
  • 635 $0.3950
  • 850 $0.3550
$0.3550 / $0.5320 Buy Now

CAD Models for DMN3053L-7 by Diodes Incorporated
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Part Data Attributes for DMN3053L-7 by Diodes Incorporated

DMN3053L-7
Diodes Incorporated
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
DIODES INC
Package Description
SOT-23, 3 PIN
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
8 Weeks
Samacsys Manufacturer
Diodes Incorporated
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
4 A
Drain-source On Resistance-Max
0.045 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
42 pF
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
1.2 W
Pulsed Drain Current-Max (IDM)
35 A
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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