There are no models available for this part yet.
Overview of DMN3013LDG-7 by Diodes Incorporated
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 5 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMN3013LDG-7 by Diodes Incorporated
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
DMN3013LDG-7-ND
|
DigiKey | MOSFET 2N-CH 30V 9.5A PWRDI3333 Min Qty: 1000 Lead time: 24 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.2655 / $0.3483 | Buy Now | |
|
DISTI #
DMN3013LDG-7
|
Avnet Americas | MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 1K - Tape and Reel (Alt: DMN3013LDG-7) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
|
$0.3024 | Buy Now | |
|
DISTI #
621-DMN3013LDG-7
|
Mouser Electronics | MOSFETs MOSFET BVDSS: 25V-30V | 0 |
|
$0.3040 / $0.8000 | Order Now | |
|
DISTI #
DMN3013LDG-7
|
TME | Transistor: N-MOSFET, unipolar, 30V, 7.6A, Idm: 80A, 1.25W Min Qty: 1 | 0 |
|
$0.3620 / $0.7960 | RFQ | |
|
DISTI #
DMN3013LDG-7
|
Avnet Silica | (Alt: DMN3013LDG-7) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
CAD Models for DMN3013LDG-7 by Diodes Incorporated
Part Data Attributes for DMN3013LDG-7 by Diodes Incorporated
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
DIODES INC
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Factory Lead Time
|
24 Weeks
|
|
Date Of Intro
|
2018-07-25
|
|
Samacsys Manufacturer
|
Diodes Incorporated
|
|
Avalanche Energy Rating (Eas)
|
28 mJ
|
|
Case Connection
|
SOURCE
|
|
Configuration
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
9.5 A
|
|
Drain-source On Resistance-Max
|
0.0177 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
16 pF
|
|
JESD-30 Code
|
S-PDSO-N8
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
2
|
|
Number of Terminals
|
8
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
SQUARE
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation Ambient-Max
|
2.16 W
|
|
Power Dissipation-Max (Abs)
|
2.16 W
|
|
Pulsed Drain Current-Max (IDM)
|
80 A
|
|
Reference Standard
|
MIL-STD-202
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
NO LEAD
|
|
Terminal Position
|
DUAL
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|