Part Details for DMN26D0UFB4-7 by Diodes Incorporated
Overview of DMN26D0UFB4-7 by Diodes Incorporated
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for DMN26D0UFB4-7
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK8523
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Newark | Mosfet, N-Ch, 20V, 0.24A, X2-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN26D0UFB4-7 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.0720 / $0.3700 | Buy Now |
DISTI #
621-DMN26D0UFB4-7
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Mouser Electronics | MOSFET ENHANCE MODE MOSFET 20V N-Chan RoHS: Compliant | 0 |
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$0.0410 / $0.0580 | Order Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.24A I(D), 20V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 71773 |
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$0.0277 / $0.2520 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.24A I(D), 20V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1204 |
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$0.0996 / $0.3320 | Buy Now |
DISTI #
DMN26D0UFB4-7
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TME | Transistor: N-MOSFET, unipolar, 20V, 0.18A, 0.35W, X1-DFN1006-3 Min Qty: 5 | 0 |
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$0.0349 / $0.1515 | RFQ |
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Ameya Holding Limited | Single N-Channel 20 V 350 mW Silicon Surface Mount Mosfet - DFN-3 | 587 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 222 |
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$1.2500 / $1.9200 | Buy Now |
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Win Source Electronics | MOSFET N-CH 20V 230MA DFN | 408850 |
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$0.0380 / $0.0570 | Buy Now |
Part Details for DMN26D0UFB4-7
DMN26D0UFB4-7 CAD Models
DMN26D0UFB4-7 Part Data Attributes:
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DMN26D0UFB4-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN26D0UFB4-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.24A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC, CASE DFN1006H4-3, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | DIODES INC | |
Part Package Code | DFN | |
Pin Count | 3 | |
Manufacturer Package Code | CASE DFN1006H4-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 0.24 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PBCC-N3 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.35 W | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for DMN26D0UFB4-7
This table gives cross-reference parts and alternative options found for DMN26D0UFB4-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMN26D0UFB4-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
DMG2302U-7 | Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | DMN26D0UFB4-7 vs DMG2302U-7 |
DMN2056U-7 | Small Signal Field-Effect Transistor, | Diodes Incorporated | DMN26D0UFB4-7 vs DMN2056U-7 |
DMG1013T-7 | Small Signal Field-Effect Transistor, 0.46A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | DMN26D0UFB4-7 vs DMG1013T-7 |
DMG2301U-7 | Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | DMN26D0UFB4-7 vs DMG2301U-7 |
DMN2020LSN-7 | Small Signal Field-Effect Transistor, 6.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SC-59, 3 PIN | Diodes Incorporated | DMN26D0UFB4-7 vs DMN2020LSN-7 |
DMG1012UW-7 | Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | DMN26D0UFB4-7 vs DMG1012UW-7 |
DMN2056U-13 | Small Signal Field-Effect Transistor, | Diodes Incorporated | DMN26D0UFB4-7 vs DMN2056U-13 |
DMN26D0UT-7 | Small Signal Field-Effect Transistor, 0.23A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 | Diodes Incorporated | DMN26D0UFB4-7 vs DMN26D0UT-7 |