Datasheets
DMN2300UFB4-7B by:

Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN1006H4-3, 3 PIN

Part Details for DMN2300UFB4-7B by Diodes Incorporated

Overview of DMN2300UFB4-7B by Diodes Incorporated

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Price & Stock for DMN2300UFB4-7B

Part # Distributor Description Stock Price Buy
DISTI # 86AK4767
Newark Mosfet, N-Ch, 20V, 1.3A, X2-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN2300UFB4-7B RoHS: Compliant Min Qty: 10000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 10,000 $0.0730
$0.0730 Buy Now
DISTI # 82Y6574
Newark Mosfet, N-Ch, 20V, X2Dfn1006-3, Transistor Polarity:N Channel, Continuous Drain Current Id:1.3A, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.175Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:950Mv, Power Rohs Compliant: Yes |Diodes Inc. DMN2300UFB4-7B RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $0.3230
  • 10 $0.2300
  • 25 $0.1870
  • 50 $0.1440
  • 100 $0.1010
  • 250 $0.0910
$0.0910 / $0.3230 Buy Now
DISTI # DMN2300UFB4-7BDICT-ND
DigiKey MOSFET N-CH 20V 1.3A 3DFN Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 263930
In Stock
  • 1 $0.2500
  • 10 $0.1710
  • 100 $0.1147
  • 500 $0.0882
  • 1,000 $0.0793
  • 2,000 $0.0717
  • 5,000 $0.0633
  • 10,000 $0.0580
  • 20,000 $0.0536
  • 30,000 $0.0513
  • 50,000 $0.0493
$0.0493 / $0.2500 Buy Now
DISTI # DMN2300UFB4-7B
Avnet Americas Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R - Tape and Reel (Alt: DMN2300UFB4-7B) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks, 0 Days Container: Reel 80000 Factory Stock
  • 10,000 $0.0418
$0.0418 Buy Now
DISTI # 522-DMN2300UFB4-7B
Mouser Electronics MOSFETs 20V N-Ch ENH Mode 175mOhm 4.5V 1.30A RoHS: Compliant 36882
  • 1 $0.2500
  • 10 $0.1710
  • 100 $0.0870
  • 1,000 $0.0570
$0.0570 / $0.2500 Buy Now
DISTI # V72:2272_06698100
Arrow Electronics Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2405 Container: Cut Strips Americas - 3487
  • 1,894 $0.0528
  • 3,000 $0.0479
$0.0479 / $0.0528 Buy Now
DISTI # 70438072
RS MOSFET, N Channel, Trans,20V 1.3A DFN3 | Diodes Inc DMN2300UFB4-7B RoHS: Not Compliant Min Qty: 250 Package Multiple: 1 Container: Bulk 0
  • 250 $0.3170
$0.3170 RFQ
Future Electronics N-Channel 20 V 175 mOhm 1.6 nC Enhancement Mosfet - DFN-1006-3 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks Container: Reel 10000
Reel
  • 10,000 $0.0475
  • 20,000 $0.0463
  • 30,000 $0.0457
  • 40,000 $0.0452
  • 50,000 $0.0438
$0.0438 / $0.0475 Buy Now
Future Electronics N-Channel 20 V 175 mOhm 1.6 nC Enhancement Mosfet - DFN-1006-3 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 10,000 $0.0490
  • 20,000 $0.0478
  • 30,000 $0.0472
  • 40,000 $0.0467
  • 50,000 $0.0452
$0.0452 / $0.0490 Buy Now
DISTI # DMN2300UFB4-7B
TME Transistor: N-MOSFET, unipolar, 20V, 0.96A, 0.5W, X1-DFN1006-3, ESD Min Qty: 1 0
  • 1 $0.2849
  • 5 $0.2148
  • 20 $0.1530
  • 50 $0.1205
  • 100 $0.1008
  • 250 $0.0802
  • 500 $0.0680
  • 1,000 $0.0581
  • 10,000 $0.0562
$0.0562 / $0.2849 RFQ
DISTI # DMN2300UFB4-7B
Avnet Asia Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R (Alt: DMN2300UFB4-7B) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks, 0 Days 50000
  • 10,000 $0.0095
  • 20,000 $0.0094
$0.0094 / $0.0095 Buy Now
DISTI # DMN2300UFB4-7B
Avnet Silica Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R (Alt: DMN2300UFB4-7B) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
LCSC 20V 1.3A 500mW 175m4.5V300mA 950mV250uA 1 N-Channel X2-DFN1006-3 MOSFETs ROHS 6520
  • 10 $0.0629
  • 100 $0.0502
  • 300 $0.0439
  • 1,000 $0.0392
  • 5,000 $0.0354
  • 10,000 $0.0335
$0.0335 / $0.0629 Buy Now
New Advantage Corporation N-Channel 20 V 175 mOhm 1.6 nC Enhancement Mosfet - DFN-1006-3 RoHS: Compliant Min Qty: 1 Package Multiple: 10000 1560000
  • 10,000 $0.0620
  • 1,560,000 $0.0579
$0.0579 / $0.0620 Buy Now
Win Source Electronics MOSFET N-CH 20V 1.3A 3DFN 324855
  • 1,140 $0.0439
  • 2,435 $0.0411
  • 3,780 $0.0397
  • 5,425 $0.0369
  • 7,045 $0.0355
  • 8,825 $0.0340
$0.0340 / $0.0439 Buy Now

Part Details for DMN2300UFB4-7B

DMN2300UFB4-7B CAD Models

DMN2300UFB4-7B Part Data Attributes

DMN2300UFB4-7B Diodes Incorporated
Buy Now Datasheet
Compare Parts:
DMN2300UFB4-7B Diodes Incorporated Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN1006H4-3, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Part Package Code DFN
Package Description GREEN, PLASTIC, DFN1006H4-3, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.3 A
Drain-source On Resistance-Max 0.175 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBCC-N3
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.47 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for DMN2300UFB4-7B

This table gives cross-reference parts and alternative options found for DMN2300UFB4-7B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMN2300UFB4-7B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDS331ND87Z Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation DMN2300UFB4-7B vs NDS331ND87Z
NDS331N/S62Z 1300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments DMN2300UFB4-7B vs NDS331N/S62Z
NDS331NL99Z Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation DMN2300UFB4-7B vs NDS331NL99Z
DMN2300UFB-7B Small Signal Field-Effect Transistor, 1.32A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN1006-3, 3 PIN Diodes Incorporated DMN2300UFB4-7B vs DMN2300UFB-7B
NDS331N Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation DMN2300UFB4-7B vs NDS331N
NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω, SOT-23-3, 3000-REEL onsemi DMN2300UFB4-7B vs NDS331N
NDS331N/D87Z 1300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments DMN2300UFB4-7B vs NDS331N/D87Z
Part Number Description Manufacturer Compare
NDS331NL99Z Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation DMN2300UFB4-7B vs NDS331NL99Z
NDS331ND87Z Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation DMN2300UFB4-7B vs NDS331ND87Z
NDS331N/S62Z 1300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments DMN2300UFB4-7B vs NDS331N/S62Z
NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω, SOT-23-3, 3000-REEL onsemi DMN2300UFB4-7B vs NDS331N
DMN2300UFB-7B Small Signal Field-Effect Transistor, 1.32A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN1006-3, 3 PIN Diodes Incorporated DMN2300UFB4-7B vs DMN2300UFB-7B
NDS331NS62Z Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation DMN2300UFB4-7B vs NDS331NS62Z
NDS331N/D87Z 1300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments DMN2300UFB4-7B vs NDS331N/D87Z
NDS331N Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation DMN2300UFB4-7B vs NDS331N

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