Datasheets
DMN2250UFB-7B by:

Small Signal Field-Effect Transistor, 1.35A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, X1-DFN1006-3, 3 PIN

Part Details for DMN2250UFB-7B by Diodes Incorporated

Overview of DMN2250UFB-7B by Diodes Incorporated

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Medical Imaging Renewable Energy

Price & Stock for DMN2250UFB-7B

Part # Distributor Description Stock Price Buy
DISTI # 28AK8512
Newark Mosfet, N-Ch, 20V, 1.35A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN2250UFB-7B Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 9150
  • 1 $0.4470
  • 10 $0.3110
  • 25 $0.2510
  • 50 $0.1890
  • 100 $0.1290
  • 250 $0.1120
  • 500 $0.0970
  • 1,000 $0.0800
$0.0800 / $0.4470 Buy Now
DISTI # 31-DMN2250UFB-7BCT-ND
DigiKey MOSFET N-CH 20V 1.35A 3DFN Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5928
In Stock
  • 1 $0.4300
  • 10 $0.2990
  • 100 $0.1512
  • 500 $0.1234
  • 1,000 $0.0915
  • 2,000 $0.0770
  • 5,000 $0.0736
  • 10,000 $0.0637
  • 30,000 $0.0625
  • 50,000 $0.0517
$0.0517 / $0.4300 Buy Now
DISTI # DMN2250UFB-7B
Avnet Americas Trans MOSFET N-CH 20V 1.35A 3-Pin DFN T/R - Tape and Reel (Alt: DMN2250UFB-7B) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks, 0 Days Container: Reel 90000
400000 Factory Stock
  • 10,000 $0.0373
  • 20,000 $0.0367
  • 40,000 $0.0361
  • 60,000 $0.0354
  • 80,000 $0.0348
$0.0348 / $0.0373 Buy Now
DISTI # 621-DMN2250UFB-7B
Mouser Electronics MOSFET N-CH MOSFET 20V RoHS: Compliant 87287
  • 1 $0.4300
  • 10 $0.2990
  • 100 $0.1240
  • 1,000 $0.0770
  • 2,500 $0.0740
  • 10,000 $0.0520
  • 20,000 $0.0490
$0.0490 / $0.4300 Buy Now
Future Electronics DMN2250UFB Series 20 V 1.35A N-Channel Enhancement Mode Mosfet - X1-DFN1006-3 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks Container: Reel 10000
Reel
  • 10,000 $0.0527
  • 20,000 $0.0515
  • 30,000 $0.0508
  • 50,000 $0.0499
  • 100,000 $0.0481
$0.0481 / $0.0527 Buy Now
Future Electronics DMN2250UFB Series 20 V 1.35A N-Channel Enhancement Mode Mosfet - X1-DFN1006-3 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 10,000 $0.0527
  • 20,000 $0.0515
  • 30,000 $0.0508
  • 50,000 $0.0499
  • 100,000 $0.0481
$0.0481 / $0.0527 Buy Now
DISTI # DMN2250UFB-7B
Avnet Asia Trans MOSFET N-CH 20V 1.35A 3-Pin DFN T/R (Alt: DMN2250UFB-7B) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 12 Weeks, 0 Days 0
RFQ
DISTI # DMN2250UFB-7B
Avnet Silica Trans MOSFET N-CH 20V 1.35A 3-Pin DFN T/R (Alt: DMN2250UFB-7B) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days Silica - 10000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 10000 20000
  • 10,000 $0.0600
  • 20,000 $0.0560
$0.0560 / $0.0600 Buy Now

Part Details for DMN2250UFB-7B

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DMN2250UFB-7B Part Data Attributes

DMN2250UFB-7B Diodes Incorporated
Buy Now Datasheet
Compare Parts:
DMN2250UFB-7B Diodes Incorporated Small Signal Field-Effect Transistor, 1.35A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, X1-DFN1006-3, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description CHIP CARRIER, R-PBCC-N3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.35 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBCC-N3
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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