Datasheets
DMN2050LFDB-13 by: Diodes Incorporated

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for DMN2050LFDB-13 by Diodes Incorporated

Overview of DMN2050LFDB-13 by Diodes Incorporated

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Applications Industrial Automation Motor control systems

Price & Stock for DMN2050LFDB-13

Part # Distributor Description Stock Price Buy
DISTI # DMN2050LFDB-13DICT-ND
DigiKey MOSFET 2N-CH 20V 3.3A 6UDFN Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 23999
In Stock
  • 1 $0.4100
  • 10 $0.3470
  • 100 $0.2413
  • 500 $0.1884
  • 1,000 $0.1532
  • 2,000 $0.1369
  • 5,000 $0.1300
  • 10,000 $0.1149
$0.1149 / $0.4100 Buy Now
DISTI # DMN2050LFDB-13
Avnet Americas Transistor MOSFET Array Dual N-Channel 20V 4.5A 6-Pin DFN T/R - Tape and Reel (Alt: DMN2050LFDB-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 10,000 $0.1181
  • 20,000 $0.1139
  • 40,000 $0.1104
  • 60,000 $0.1072
  • 80,000 $0.1032
  • 100,000 $0.1016
  • 1,000,000 $0.0999
$0.0999 / $0.1181 Buy Now
DISTI # 621-DMN2050LFDB-13
Mouser Electronics MOSFET DUAL N-CH EH MODE 20V 45mOhm 4.5A RoHS: Compliant 48027
  • 1 $0.4100
  • 10 $0.3470
  • 100 $0.2420
  • 500 $0.1890
  • 1,000 $0.1370
  • 2,500 $0.1300
  • 10,000 $0.1140
$0.1140 / $0.4100 Buy Now
Chip1Cloud MOSFET 2N-CH 20V 3.3A 6UDFN 6706
RFQ

Part Details for DMN2050LFDB-13

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DMN2050LFDB-13 Part Data Attributes:

DMN2050LFDB-13 Diodes Incorporated
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DMN2050LFDB-13 Diodes Incorporated Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description U-DFN2020-6, 6 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 4.5 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.3 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 63 pF
JESD-30 Code S-PDSO-N6
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.42 W
Pulsed Drain Current-Max (IDM) 25 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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